INFINEON Manuals (Industrial)

This document describes the features of SGP30N60 and SGW30N60 fast IGBT products, including lower Eoff, low conduction losses, short circuit withstand time, NPT technology application, and JEDEC certification.

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This data sheet is about SPB12N50C3 Cool MOS power transistor, including the product's maximum rated current, maximum peak current, reverse diode dv/dt, maximum power dissipation, operating temperature range and other information.

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BSP295 is a SIPMOS Small-Signal-Transistor with the features of N-Channel, Enhancement mode, dv/dt rated, PG-SOT-223 package.

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SPP18P06P SIPMOS Power-Transistor is an enhancement type three-terminal power switch transistor for P-channel applications with Avalanche rating and 175°C operating temperature.

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SPW47N65C3 CoolMOSTM Power Transistor features include worldwide best R ds,on in TO247, low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant.

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SPD08P06P and SPU08P06P are SIPMOS Power-Transistors with the following features: P-Channel, Enhancement mode, Avalanche rated, dv/dt rated, 175°C operating temperature.

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SPP08P06P SIPMOS Power-Transistor, features P-Channel, Enhancement mode, Avalanche rated, dv/dt rated, operating temperature 175°C

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This document is the datasheet of Infineon's MOSFET device. This device has high current output capability and supports high voltage low voltage applications. It can be applied to power supplies, switching power supplies and other scenarios.

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The IPW60R125CP is a CoolMOSTM power transistor that features the lowest RONxQg, ultra low gate charge, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, and Pb-free lead plating and RoHS compliance. CoolMOS CP is specially designed for: Hard switching topologies, for Server and Telecom

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BSP171P SIPMOS® Small-Signal-Transistor Features P-Channel, Enhancement mode, Logic level, Avalanche rated, dv/dt rated, Pb-free lead plating; RoHS compliant.

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SPD02N60C3/SPU02N60C3 is a high voltage power transistor of Cool MOS™ series, with features such as ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances and 150°C operating temperature

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BSC022N03S OptiMOS®2 Power Transistor is a fast switching MOSFET for SMPS optimized for notebook DC/DC converters. It is qualified according to JEDEC1 for target applications. It features N-channel, logic level, very low on-resistance R DS(on), excellent gate charge x R DS(on) product (FOM), superior thermal resistance, avalanche rated, dv/dt rated.

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BSP 315 P SIPMOS Small-Signal-Transistor is a P-Channel, Enhancement mode, Avalanche rated, Logic Level, dv/dt rated electronic component.

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The BSP317P SIPMOS is a logic-level N-channel enhancement mode MOSFET from Texas Instruments with a maximum VDS of -250V and a maximum Ptot of 1.8W, with an operating temperature of -55-150℃.

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SPA20N60CFD is CoolMOSTM Power Transistor, features new revolutionary high voltage technology, intrinsic fast-recovery body diode, extremely low reverse recovery charge and ultra low gate charge, Extreme dv/dt rated, High peak current capability, Periodic avalanche rated and qualified according to JEDEC0) for target applications

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BCV62 is a PNP silicon double transistor designed for use as a current mirror. It features good thermal coupling and VBE matching, high current gain, and low collector-emitter saturation voltage.

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The IPP90R500C3 CoolMOS™ Power Transistor features the lowest RON x Qg figure-of-merit, extreme dv/dt rating, and high peak current capability. It is qualified according to JEDEC1) for target applications and is lead-free with lead plating, RoHS compliant, and features ultra low gate charge. CoolMOS™ 900V is designed for Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, and Industrial SMPS.

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The PROFET® ITS612N1 is a smart two channel highside power switch from Infineon Technologies AG for industrial applications. It features overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection (including load dump), fast demagnetization of inductive loads, reverse battery protection, undervoltage and overvoltage shutdown with auto-restart and hysteresis, open drain diagnostic output, open load detection in OFF-state, CMOS compatible input, loss of ground and loss of Vbb protection, electrostatic discharge (ESD) protection. It can be used for µC compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads in industrial applications, for all types of resistive, inductive and capacitive loads, and to replace electromechanical relays, fuses and discrete circuits.

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IPD50R520CP is a power transistor. It features the lowest RONxQg, ultra low gate charge, extreme dv/dt rating, high peak current capability, lead-free lead plating, RoHS compliant and qualified according to JEDEC1) for target applications.

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