INFINEON Manuals (Industrial)

BTS 6142D is a PROFET series Smart High-Side Power Switch with one channel and 12 mΩ resistance, designed for automotive applications.

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IPW50R199CP CoolMOSTM power transistor features the lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rated, high peak current capability, Pb-free lead plating; RoHS compliant and qualified according to JEDEC for target applications.

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This document describes the features and characteristics of the BFP620 Apr-21-2004 1 NPN Silicon Germanium RF Transistor. It is suitable for a wide range of wireless applications, especially CDMA and WLAN applications. The noise figure is outstanding with 0.7 dB at 1.8 GHz and 1.3 dB at 6 GHz. The maximum stable gain is 21.5 dB at 1.8 GHz and 11 dB at 6 GHz. The transistor is equipped with gold metallization for extra high reliability.

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SN7002W is a N-channel enhancement mode logic level dv/dt rated small signal transistor with a maximum voltage of 60V, an RDS(on) of 5 ohms and an ID of 0.23 A.

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SPP06N60C3 CoolMOSTM Power Transistor is a high performance power transistor with ultra low gate charge, periodic avalanche rated, high peak current capability, ultra low effective capacitances and extreme dv/dt rated.

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This document provides technical information about the FZ600R12KE3 IGBT module, including maximum rated values and characteristic values.

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This is a 16-bit single-chip microcontroller

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IPP60R299CP CoolMOSTM Power Transistor is a low RonxQg, ultra low gate charge, extreme dv/dt rated, high peak current capability power transistor.

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BSP171P SIPMOS® Small-Signal-Transistor is an enhancement mode P-channel device with logic level, avalanche rated, dv/dt rated and Pb-free lead plating, RoHS compliant.

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The IPI90R1K0C3 CoolMOS™ power transistor features the lowest figure-of-merit RON x Qg, extreme dv/dt rating, high peak current capability. It is designed for quasi resonant flyback/forward topologies, PC Silverbox and consumer applications, and industrial SMPS.

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BC856, BC857, BC860 are three PNP silicon AF transistors with high current gain, low collector-emitter saturation voltage and low noise, suitable for AF input stages and driver applications.

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The SPP21N50C3, SPI21N50C3 and SPA21N50C3 are Cool MOS™ power transistors that feature the world's best RDS(on) and ultra low effective capacitances. These transistors have periodic avalanche rating, extreme dv/dt rating, ultra low gate charge and improved transconductance.

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The IPA90R500C3 CoolMOS™ Power Transistor features the lowest RON x Qg, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant, ultra low gate charge CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, Industrial SMPS

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IPI60R199CP CoolMOSTM Power Transistor is specially designed for hard switching topologies for Server and Telecom applications. It features lowest figure-of-merit RONxQg, ultra low gate charge and extreme dv/dt rating, as well as high peak current capability.

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BAV99 is a silicon switching diode launched by ON Semiconductor. It has the characteristics of high switching speed, high breakdown voltage and low power consumption. It is suitable for applications such as high-frequency switching power supply, battery charger, DC/DC converter

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IKW25T120 is a low loss DuoPack IGBT from Infineon, which is produced using TrenchStop and Fieldstop technology and features a soft, fast recovery anti-parallel EmCon HE diode.

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This document provides detailed information on the BSP125 SIPMOS power transistor, including product features, model, parameters, and packaging.

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This document is a specification sheet for a product, describing its features and characteristics, including operating voltage, temperature range, current, etc.

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SPP08N80C3 SPA08N80C3 is a low on-resistance, ultra low gate charge, high isolation power transistor, with a maximum voltage of 800V and a rated current of 8A.

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This datasheet introduces the features and characteristics of the PROFET® BTS721L1 four-channel high-side power switch, including overload protection, current limiting, short-circuit protection, thermal shutdown, overvoltage protection (including load dump) and fast demagnetization of inductive loads.

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