INFINEON Manuals (Industrial)

This document describes the features and characteristics of the SPW32N50C3 Cool MOS™ power transistor, including new revolutionary high voltage technology, ultra low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra low effective capacitances, and improved transconductance.

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This datasheet mainly introduces the parameter information of IKP20N60T and IKW20N60T two IGBTs, including rated voltage, rated current, collector-emitter compression voltage, maximum junction temperature, marking, and package.

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This document describes the features and characteristics of IPI50R140CP CoolMOS® power transistor, including worldwide best R DS ,on, lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rated, high peak current capability, etc.

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IPB60R250CP is a power transistor with the lowest RONxQg, ultra-low gate charge, extreme dv/dt and high peak current capability.

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This document is about the specifications of NXP's P-TO220-3-31

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IPA60R250CP is a CoolMOS® power transistor, which has the lowest RONxQg figure of merit, ultra low gate charge 6.6, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, lead-free lead plating, RoHS compliant. CoolMOS CP is designed for: • Hard switching SMPS topologies.

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IPW90R1K0C3 CoolMOS™ Power Transistor is a low-on-resistance power transistor with an extremely low Qg and high dv/dt rating.

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This datasheet is SPI20N60CFD Cool MOS™ Power Transistor parameter table, including maximum voltage, current, power consumption and other characteristics

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This document describes the features and characteristics of the IKW75N60T TrenchStop® Series q Power Semiconductors, including the Low Loss DuoPack design, very low VCE(sat), maximum junction temperature of 175°C, short circuit withstand time of 5µs, positive temperature coefficient in VCE(sat), very tight parameter distribution, high ruggedness, temperature stable behavior, very high switching speed, low EMI, and very soft, fast recovery anti-parallel EmCon HE diode.

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This is a new type of high voltage technology power transistor with extremely low RDS(on), high peak current capability, improved transconductance, and P-TO-220-3-31 fully isolated package (2500VAC; 1 minute).

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BSO350N03 OptiMOS®2 Power-Transistor is a fast switching MOSFET for SMPS, optimized for notebook DC/DC, with dual n-channel, logic level, excellent gate charge x R DS(on) product (FOM), very low on-resistance R DS(on), avalanche rated, dv/dt rated, lead-free lead plating, RoHS compliant.

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IPI60R520CP CoolMOSTM Power Transistor is a power transistor from Infineon. This product has the lowest power loss, ultra-low gate charge, extreme dv/dt rating, high peak current capability and high reliability, etc. It is suitable for hard switching SMPS topologies.

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BSS139 is a N-channel MOSFET device produced by STMicroelectronics. Its maximum rated voltage is 250V, maximum continuous current is 0.1A, maximum pulsed current is 0.4A, minimum gate threshold voltage is -1.4V, and maximum drain-source on-resistance is 30Ω.

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This document describes the features and characteristics of the SPP20N65C3, SPA20N65C3, and SPI20N65C3 Cool MOS™ power transistors, including worldwide best RDS(on), ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability, and improved transconductance.

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The SPW35N60C3 CoolMOSTM power transistor features new revolutionary high voltage technology, ultra-low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra-low effective capacitances, and improved transconductance.

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The BTS650P is a high-side high current power switch with the following features: overload protection, current limiting, short circuit protection, overtemperature protection, overvoltage protection (including load dump), output negative voltage clamp, fast deenergizing of inductive loads, low ohmic inverse current operation, Reversave (Reverse battery protection), diagnostic feedback with load current sense, open load detection via current sense, loss of Vbb protection, electrostatic discharge protection.

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The BTS 282 Z is a speed sensor with logic level input and analog driving. It has a switching frequency up to 1MHz, overtemperature protection, avalanche rating and high current pinning.

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The BAS16 series is a silicon switching diode launched by ON Semiconductor. It features high switching speed and is suitable for high-frequency switching applications. The series adopts SOT23, TSLP-2-1, SC79, SCD80, SOD323, TSLP-4-4, SOT363, SC74, SOT323 and other packaging forms to meet the needs of different applications.

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This document provides detailed information about the BTS711L1 product, including its features and characteristics, such as overload protection, current limiting, short circuit protection, thermal shutdown, overvoltage protection, fast demagnetization of inductive loads, reverse battery protection, undervoltage and overvoltage shutdown, open drain diagnostic output, open load detection, CMOS compatible input, loss of ground and loss of Vbb protection, electrostatic discharge (ESD) protection

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