INFINEON Manuals (Industrial)

This document describes the features and characteristics of the BFR380F NPN silicon RF transistor, such as high current capability, low noise figure, and low voltage operation. It is ideal for wide dynamic range applications and low phase noise oscillators up to 3.5 GHz.

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The SPW15N60CFD CoolMOSTM power transistor features intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra-low gate charge, extreme dv/dt rating, high peak current capability, etc. It is designed for soft-switching PWM stages, LCD and CRT TVs.

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PROFET® ITS428L2 is a smart high-side power switch for industrial applications. It integrates a high-performance N-channel vertical power MOSFET, charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS® technology.

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SPP20N60CFD is the next-generation high-voltage power transistor. Its RDS(on) is 0.22 ohm and ID is 20.7 A. The product has extremely low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability, intrinsic fast-recovery body diode and extremely low reverse recovery charge.

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IPP60R250CP CoolMOSTM power transistor features the lowest figure-of-merit RONxQg, ultra low gate charge, extreme dv/dt rated, high peak current capability. It is designed for hard switching SMPS topologies.

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BSP 372 is an N-channel enhancement mode logic level avalanche rated small signal transistor. It features a maximum drain-source breakdown voltage of 100V, a maximum continuous drain current of 1.7A and a 0.31 ohm on-state drain-source resistance.

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ITS 4142N is a smart high-side power switch for industrial applications. It has short circuit protection, current limitation, overload protection, overvoltage protection (including load dump), undervoltage shutdown (with auto-restart and hysteresis) and other features.

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IPA50R299CP is a low on-resistance and low gate charge power transistor with extreme dv/dt rating and high peak current capability.

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The IPD60R600CP CoolMOS power transistor features the lowest RON x Qg figure-of-merit, ultra-low gate charge, extreme dv/dt rating, high peak current capability and qualified according to JEDEC1) for target applications.

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IKW50N60T is a IGBT product launched by Infineon. It uses TrenchStop® and Fieldstop technology and has the characteristics of low voltage drop, high reliability, high heat resistance, etc. This product is suitable for frequency converters and uninterrupted power supply applications.

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This document is about NXP's BUK9013 transistor data sheet, which introduces the performance, characteristics and parameters of the transistor.

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IPA90R1K0C3 CoolMOS™ Power Transistor features the lowest figure-of-merit RON x Qg, extreme dv/dt rating, high peak current capability. It is qualified according to JEDEC1) for target applications. The transistor is designed for quasi resonant flyback/forward topologies, PC Silverbox and consumer applications, and industrial SMPS.

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SPP11N80C3 SPA11N80C3 Cool MOS™ Power Transistor is a high voltage transistor with low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.

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The SPB20N60S5 Cool MOS™ power transistor has a maximum voltage of 600 volts, a 0.19-ohm on-resistance and a continuous drain current of 20 amperes. The transistor features ultra-low gate charge, extreme dv/dt ratings, ultra-low effective capacitances, and improved transconductance.

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This document introduces the technical parameters of the Thinfilm SiC Schottky Diode, including maximum ratings, operating temperature range, package type, and pin assignment.

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C161PI is a 16-bit single-chip microcontroller from Infineon, which is mainly used in industrial automation, automotive electronics, consumer electronics, motor control and other fields.

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SPP/B80P06P SIPMOS® Small-Signal-Transistor is a P-channel enhancement mode diode with avalanche rating, dv/dt rating and 175°C operating temperature. It is compliant with RoHS standard.

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The FP40R12KE3 is an IGBT module from Infineon with a 1600V reverse voltage, a maximum DC current of 60A, a surge current of 315A, and a total power dissipation of 200W.

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IPW60R250CP CoolMOSTM Power Transistor features the lowest figure-of-merit RONxQg, ultra low gate charge, extreme dv/dt rating, and high peak current capability. This product is qualified according to JEDEC1) for target applications, Pb-free lead plating; RoHS compliant. CoolMOS CP is designed for: Hard switching SMPS topologies.

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