INFINEON Manuals (Industrial)

BSP296 is a N-channel enhancement mode logic level power MOSFET from Infineon Technologies. It has a maximum continuous drain current of 1.1A, a maximum on-resistance of 0.7Ω, a maximum reverse diode dv/dt of 6kV/µs, and a maximum power dissipation of 1.79W. The device is available in a PG-SOT-223 package and is rated for operation in temperatures ranging from -55°C to +150°C.

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The IPW90R500C3 is a CoolMOS™ 900V power transistor with the lowest figure-of-merit RON x Qg, extreme dv/dt rating, high peak current capability, and Pb-free lead plating; RoHS compliance; ultra low gate charge

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BSM 50 GB 120 DN2 is an half-bridge IGBT power module produced by Infineon with maximum DC collector current of 78A and maximum collector-emitter voltage of 1200V.

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This document describes the features and characteristics of the SGP10N60A, SGB10N60A, and SGW10N60A fast IGBT products. These products utilize NPT technology and offer 75% lower Eoff and low conduction losses compared to previous generations. They are designed for motor controls and inverter applications. The NPT technology provides very tight parameter distribution, high ruggedness, temperature stable behavior, and parallel switching capability. Complete product spectrum and PSpice models can be found on the Infineon website.

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The SDP04S60, SDD04S60 SDT04S60 is the world's first 600V Schottky diode, with industry-leading switching characteristics, no reverse recovery, no temperature dependence, fast switching speed, and is ideal for power factor correction applications.

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The SPU01N60C3 SPD01N60C3 is a new revolutionary high voltage MOS power transistor with ultra low gate charge, periodic avalanche rated, extreme dv/dt rated, ultra low effective capacitances and improved transconductance.

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IKP04N60T is a power semiconductor product launched by Infineon. It uses TrenchStop® and Fieldstop technology and has the characteristics of low VCE(sat), high reliability and high switching speed.

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IDT16S60C 2nd Generation thinQ!TM SiC Schottky Diode is a high-performance Schottky diode produced by IDT company. It features benchmark switching behavior, no reverse recovery/no forward recovery, no temperature influence on switching behavior, high surge current capability and so on.

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IPW50R350CP is a power transistor that has the latest technology, the lowest RON x Qg, the ultra-low gate charge, extreme dv/dt and other characteristics. This product is suitable for hard switching and soft switching SMPS topologies, CCM PFC for Lamp Ballast, LCD and PDP TV and PWM for Lamp Ballast, LCD and PDP TV.

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IKA15N60T is a 600V IGBT with soft recovery anti-parallel EmCon HE diode, max. junction temperature is 175 °C, and short circuit withstand time is -5µs.

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The BSM 200 GB 120 DN2 is an IGBT module produced by Bosch. Its maximum ratings are Vce of 1200V and IC of 290A.

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BDP947, BDP949 are two silicon NPN transistors with high collector current, high current gain and low collector-emitter saturation voltage.

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IPP90R800C3 CoolMOS™ Power Transistor is a power transistor launched by Infineon. The product has the lowest RON x Qg, extreme dv/dt, high peak current capability and other features. It is suitable for various switch power supply applications.

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IKP03N120H2 and IKW03N120H2 are Infineon's high performance power semiconductors, which are suitable for applications such as SMPS, Lamp Ballast, ZVS-Converter. These products have stable temperature characteristics and have passed JEDEC2 certification.

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The PROFET® ITS621L1 is a smart two-channel high side power switch from Infineon. The product features overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection (including load dump), fast demagnetization of inductive loads, reverse battery protection, undervoltage and overvoltage shutdown with auto-restart and hysteresis, open drain diagnostic output, open load detection in ON-state, CMOS compatible input, loss of ground and loss of Vbb protection, and electrostatic discharge (ESD) protection. It is suitable for 12 V and 24 V DC grounded loads in industrial applications and can replace electromechanical relays, fuses, and discrete circuits.

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IPD60R385CP CoolMOS® Power Transistor is the worldwide best R ds,on in TO252, ultra low gate charge, extreme dv/dt rated, high peak current capability, qualified according to JEDEC1) for target applications, Pb-free lead plating, RoHS compliant.

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This document describes the features and characteristics of the BSP89 SIPMOS small-signal transistor, including maximum voltage, drain current, power dissipation, operating temperature, etc.

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The document describes the features and characteristics of the 2005-09-29 BFP193W 1 NPN Silicon RF Transistor, which is suitable for low noise, high-gain amplifiers up to 2 GHz and linear broadband amplifiers. It has an fT of 8 GHz and a gain of 1 dB at 900 MHz.

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This document describes the features and characteristics of the SPP11N65C3, SPA11N65C3, and SPI11N65C3 Cool MOS™ power transistors, including new high voltage technology, ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, high peak current capability, and improved transconductance.

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The IPP90R1K2C3 CoolMOS™ power transistor features the lowest RONxQg, extreme dv/dt rating, high peak current capability, qualified according to JEDEC1) for target applications, lead-free lead plating; RoHS compliant; Ultra low gate charge CoolMOS™ 900V is designed for: Quasi Resonant Flyback / Forward topologies, PC Silverbox and consumer applications, Industrial SMPS

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