INFINEON Manuals (Industrial)
INFINEON SPD02N60C3 handbook
This document is a datasheet for NXP NTC thermistor, which introduces the product's functions, characteristics, specifications and parameters.
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INFINEON IPW50R140CP handbook
This document describes the features and characteristics of the IPW50R140CP CoolMOSTM power transistor, including worldwide best R DS,on, lowest figure of merit RON x Qg, ultra low gate charge, extreme dv/dt rated, high peak current capability, etc.
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INFINEON BFP540 handbook
BFP540 is an NPN silicon RF transistor with outstanding Noise Figure F=0.9dB and high reliability gold metallization, suitable for 1.8GHz highest gain low noise amplifier.
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INFINEON IPW60R299CP handbook
This document describes the features of the IPW60R299CP CoolMOSTM power transistor, including the lowest figure-of-merit R ONxQg, ultra-low gate charge, extreme dv/dt rating, and high peak current capability. The product is qualified according to JEDEC standards and is suitable for hard switching SMPS topologies.
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INFINEON SPW52N50C3 handbook
SPW52N50C3 is a high voltage MOS power transistor with the world's best RDS(on), ultra-low gate charge, periodic avalanche rating, extreme dv/dt rating, ultra-low effective capacitances and improved transconductance
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INFINEON BSP297 handbook
This document is a product summary of BSP297 Rev. 1.21 SIPMOS small-signal transistor. The transistor is an N-channel enhancement mode MOSFET with a maximum drain-source voltage of 200V and a drain-source on-resistance of 1.8Ω. Its features include enhancement mode logic level, dv/dt rating, and PG-SOT-223 package.
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INFINEON IPW90R800C3 handbook
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INFINEON SN7002N handbook
This document provides a summary of the SN7002N SIPMOS small-signal transistor, released on July 21, 2005, in Rev. 2.2. The transistor is an N-channel enhancement mode device with logic level characteristics. It has a drain-source voltage of 60V, a drain-source on-resistance of 5Ω, and a drain current of 0.2A.
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INFINEON BUZ 30A handbook
BUZ 30A is a N channel enhancement type avalanche rated power transistor
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INFINEON FF300R12KE3 Manual
This datasheet lists the technical specifications of the FF300R12KE3 IGBT-module
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INFINEON BUZ 345 handbook
BUZ 345 is an N-channel enhancement mode avalanche rated power transistor. It features a 100 V drain-source breakdown voltage, 41 A continuous drain current, and 0.045 Ω drain-source on-resistance. It is suitable for a variety of applications such as motor drives, power conversion, and lighting control.
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INFINEON SPI80N08S2-07 SPP80N08S2-07 SPB80N08S2-07 handbook
This document describes the features and characteristics of the SPI80N08S2-07, SPP80N08S2-07, and SPB80N08S2-07 OptiMOS power transistors, released on May 9, 2003. These features include N-channel enhancement mode, 175°C operating temperature, avalanche rating, dv/dt rating, etc.
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INFINEON PROFET BTS426L1 handbook
PROFET® BTS426L1 is a high side power switch launched by Texas Instruments. It has overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection (including load dump) and other features. It can be applied to 12 V and 24 V DC grounded loads, replacing electromechanical relays, fuses and discrete circuits.
File format: PDF Size:328 KB
INFINEON SPW07N60CFD handbook
SPW07N60CFD CoolMOSTM Power Transistor is a power transistor with many features and characteristics, including intrinsic fast-recovery body diode, extremely low reverse recovery charge, ultra-low gate charge, extreme dv /dt rating, high peak current capability, etc. It is designed for applications such as soft switching PWM stages and LCD & CRT TVs.
File format: PDF Size:662 KB
INFINEON BSS159N handbook
BSS159N is an N-channel depletion mode small-signal transistor, rated for dv/dt, available with VGS(th) indicator on reel, lead-free lead-plating, RoHS compliant.
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INFINEON BSP324 handbook
This document describes the features and characteristics of BSP324 SIPMOS power transistors, including N-channel, enhancement mode, logic level, and dv/dt rating.
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INFINEON ITS 4141N handbook
ITS 4141N is a Smart High-Side Power Switch for Industrial Applications. It features short circuit protection, current limitation, overload protection, overvoltage protection (including load dump), undervoltage shutdown and reverse battery protection.
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INFINEON IPA60R600CP handbook
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INFINEON SDT05S60 handbook
The SDT05S60 is the world's first 600V Schottky diode, using a revolutionary semiconductor material - Silicon Carbide, with benchmark switching behavior, no reverse recovery, no temperature influence on the switching behavior and no forward recovery.
File format: PDF Size:210 KB
INFINEON BFR 181W handbook
BFR 181W is a NPN silicon RF transistor, used for low noise, high gain broadband amplifiers at collector currents from 0.5 mA to 12 mA, ft = 8 GHz, F = 1.45 dB, 900 MHz
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