ST Manuals

STP60NS04ZB N-channel clamped - 10mΩ - 60A - TO-220 Fully protected Mesh Overlay™ Power MOSFET is the latest developed product of ST company. It has features of 100% avalanche tested, low capacitance and gate charge, 175℃ maximum junction temperature. This product is suitable for automotive and other harsh environments.

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This document describes the technical characteristics of the STP60NS04ZB N-CHANNEL CLAMPED 10mΩ - 60A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET dated 1/8 November 2002. The product is produced using advanced Mesh Overlay technology and has additional clamping capabilities, making it suitable for applications in harsh environments such as automotive.

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This document describes the features and characteristics of the STP60NS04Z N-channel clamped MOSFET, including low on-resistance, 100% avalanche tested, low capacitance and gate charge, and a maximum junction temperature of 175℃. This product is produced using the latest Mesh Overlay process and is suitable for automotive environments and other applications requiring extra ruggedness.

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This document is about the preliminary data of STP60NS04Z N - CHANNEL CLAMPED 10mΩ - 60A - TO-220 FULLY PROTECTED MESH OVERLAY MOSFET. The product features low on-resistance, high voltage clamping, low capacitance, and gate charge, making it suitable for applications such as ABS, SOLENOID DRIVERS, MOTOR CONTROL, and DC-DC CONVERTERS.

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STP60NH2LL is an N-channel power MOSFET that utilizes ST's STripFET™ technology. It has low conduction and switching losses, making it suitable for high-efficiency DC-DC converter applications.

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This document introduces a N-channel power MOSFET product with extremely high dv/dt capability and low input capacitance and gate charge. It is suitable for high-efficiency DC/DC converters, industrial and lighting equipment, and motor control applications.

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This document describes the features and characteristics of the STB60NF06L, STP60NF06L, and STP60NF06LFP products, including their suitability as primary switches in high-efficiency isolated DC-DC converters and other applications with low gate charge drive requirements.

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This document describes the features and characteristics of STB60NF06L, STP60NF06L, and STP60NF06LFP, which are N-channel 60V power MOSFETs. These products are realized using STMicroelectronics' unique STripFET process, which minimizes input capacitance and gate charge. They have exceptional dv/dt capability, have undergone 100% avalanche testing, and are suitable for advanced high-efficiency isolated DC-DC converters and applications with low gate charge drive requirements.

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This document introduces the STB60NF06L, STP60NF06L, and STP60NF06LFP series of N-CHANNEL 60V - 0.012Ω - 60A MOSFETs. These products have low input capacitance and gate charge, making them suitable for high-efficiency, high-frequency isolated DC-DC converters and applications with low gate drive requirements.

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STP16NF06 is a N-channel MOSFET from STMicroelectronics. Its features are typical RDS(on) = 0.08 Ω, exceptional dv/dt capability and low gate charge (100 °C), suitable for motor control, audio amplifiers, high current, high switching speed, solenoid and relay drivers, DC-DC and DC-AC converters, automotive and other applications.

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This model is a N-channel power MOSFET device from ST company. Its features are low on-resistance, rugged avalanche characteristics and less critical alignment steps, therefore a remarkable manufacturing reproducibility.

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STP60NF06 is a N-channel MOSFET produced by STMicroelectronics. It has a maximum on-resistance of 0.014Ω and a maximum current of 60A. The product is manufactured using the STripFET process and has the advantages of small input capacitance, fast switching speed, and low gate charge. It is suitable for applications such as high-efficiency DC-DC converters, UPS and motor control.

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This document describes the features and characteristics of the STP60NF06 N-channel 60V power MOSFET. This MOSFET has exceptional dv/dt capability and low input capacitance and gate charge, making it suitable for applications such as high-efficiency isolated DC-DC converters.

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This document describes the features and characteristics of an N-channel power MOSFET product, including the use of second generation MDmesh™ technology, low input capacitance and gate charge, and low gate input resistance. The product is suitable for switching applications in high-efficiency converters.

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STD7NM50N-1,STF7NM50N and STP7NM50N are second generation MDmesh™ Power MOSFET with 100% avalanche tested, low input capacitance and gate charge, low gate input resistance, suitable for the most demanding high efficiency converters application.

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STP7NK80Z - STP7NK80ZFP STB7NK80Z - STB7NK80Z-1 is ST’s N-CHANNEL800V-1.5Ω - 5.2A TO-220/TO-220FP/I2PAK/D2PAK Zener-Protected SuperMESH™Power MOSFET, with extremely high dv/dt capability and can be used in high current, high speed switching, SMPS applications.

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The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip- based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is tak- en to ensure a very good dv/dt capability for the most demanding applications. Such series comple- ments ST full range of high voltage MOSFETs in- cluding revolutionary MDmesh™ products.

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STP7NK40Z-STP7NK40ZFP-STD7NK40Z-STD7NK40Z-1 is a N-channel 400V-0.85Ω-5.4A MOSFET produced by ST company. Its features include typical RDS(on)=0.85Ω, extremely high dv/dt capability, 100% avalanche tested, minimized gate charge, very low intrinsic capacitance and very good manufacturing repeatability. This series of products can be used in high current, high speed switching, offline power supplies, adapters and PFC applications.

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STP7NK30Z is a high performance MOSFET device produced by ST company. It has a rated voltage of 300V, a conduction resistance of 0.80 ohms and a maximum current of 5A. The device has extremely high dv/dt capability and 100% avalanche testing, making it ideal for demanding applications.

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