ST Manuals

L6561 is the improved version of the L6560 standard Power Factor Corrector. Fully compatible with the standard version, it has a superior performing multiplier making the device capable of working in wide input voltage range applications (from 85V to 265V) with an excellent THD. Furthermore the start up current has been reduced at few tens of mA and a disable function has been implement- ed on the ZCD pin, guaranteeing lower current consumption in stand by mode. Realised in mixed BCD technology, the chip gives the following benefits: – micro power start up current – 1% precision internal reference voltage – (Tj = 25°C) – Soft Output Over Voltage Protection – no need for external low pass filter on the cur- rent sense – very low operating quiescent current minimis- es power dissipation The totem pole output stage is capable of driving a Power MOS or IGBT with source and sink cur- rents of ±400mA. The device is operating in tran- sition mode and it is optimised for Electronic Lamp Ballast application, AC-DC adaptors and SMPS.

File format: PDF Size:170 KB

File format: PDF Size:170 KB

File format: PDF Size:352 KB

This document introduces the technical parameters and characteristics of BTA12 B/C BTB12 B/C triacs, including maximum operating temperature, maximum current, insulation voltage, etc.

File format: PDF Size:77 KB

File format: PDF Size:206 KB

File format: PDF Size:206 KB

This document describes the features and characteristics of the BTA12, BTB12, and T12xx series triacs, including medium current, low thermal resistance, high commutation capability, and insulation ceramic. These triacs are suitable for applications such as static relays, light dimmers, and appliance motors speed controllers.

File format: PDF Size:126 KB

This document describes the features and characteristics of LM124W-LM224W-LM324W low power quad operational amplifiers, including wide gain bandwidth, input common-mode voltage range, large voltage gain, low supply current, and wide power supply range.

File format: PDF Size:792 KB

The STP6NB90/STP6NB90FP is an advanced family of power MOSFETs from STMicroelectronics with outstanding performances, featuring a typical RDS(on) = 1.7 ohm, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. Applications include high current, high speed switching, switch mode power supplies (SMPS), DC-AC converters for welding equipment and uninterruptible power supplies and motor drive.

File format: PDF Size:124 KB

STP6NB80 is a N-channel power MOSFET produced by STMicroelectronics. Its maximum on-resistance is 1.6 ohms, maximum voltage is 800V, and maximum current is 5.7A. It is used in high-frequency high-voltage switching, SMPS, DC-AC converters, welding equipment and UPS.

File format: PDF Size:75 KB

File format: PDF Size:75 KB

STP6NB50/STP6NB50FP are N-channel enhancement mode MOSFETs from SGS-Thomson, which uses Mesh Overlay process and has extremely low on-resistance, high dv/dt capability, very low intrinsic capacitances and minimized gate charge, suitable for high current, high speed switching applications such as switch mode power supplies, welding equipment and motor drive

File format: PDF Size:137 KB

This document describes the features and characteristics of the STP6NB50 and STP6NB50FP N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFETs, including low RDS(on), extremely high dv/dt capability, 100% avalanche tested, very low intrinsic capacitances, and minimized gate charge.

File format: PDF Size:137 KB

This document describes the features and performance of the power MOSFET products, STP6NB25 and STP6NB25FP, produced by STMicroelectronics. These products utilize the latest high voltage MESH OVERLAY process and offer extremely high dv/dt capability, 100% avalanche tested, very low intrinsic capacitances, and minimized gate charge. They are suitable for high current, high speed switching, UPS, DC-DC & DC-AC converters for telecom, industrial, and consumer environments.

File format: PDF Size:141 KB

STP6NB25 is a N-channel MOSFET produced by STMicroelectronics. Its feature is that RDS(on) is only 0.9 ohms, dv/dt capability is extremely high, and it can be used for high current, high frequency switching applications, such as UPS power supplies, DC-DC&DC-AC converters.

File format: PDF Size:141 KB

This document describes the features and characteristics of the N-channel enhancement mode fast power MOS transistors of STP6NA80 and STP6NA80FI models, including low RDS(on) and gate charge, unmatched ruggedness, and superior switching performance.

File format: PDF Size:206 KB

The STP6LNC60/STP6LNC60FP is a 600V-1Ω-5.8A N-channel MOSFET, which is used in high current, high speed switching, switch mode power supplies (SMPS), DC-AC converters for welding equipment and uninterruptible power supplies, and motor drives.

File format: PDF Size:333 KB

STD65NF06 STP65NF06 N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET is a new power MOSFET from STMicroelectronics. It has standard level gate drive, 100% avalanche tested, and is suitable for switching applications.

File format: PDF Size:322 KB

STP62NS04Z is a N-channel CLAMPED MOSFET produced by Lingtong Technology. It has the characteristics of low RDS(on), 100% avalanche tested and 175°C maximum junction temperature, which is suitable for harsh environments such as automotive electronics.

File format: PDF Size:267 KB

This document is the datasheet of STP62NS04Z N-channel clamped 12.5mΩ - 62A - TO-220 Fully protected MESH OVERLAY™ Power MOSFET

File format: PDF Size:267 KB