ST Manuals

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STP7NE10 is an N-channel power MOSFET with a operating voltage of 100V, on-resistance of 0.3Ω, current of 7A, exceptional dv/dt capability, and 100% avalanche tested. This product is suitable for applications such as DC motor control, DC-DC and DC-AC converters, and synchronous rectification.

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STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET is a 800V ultra-low Rds(on) gate diode protected power MOSFET, mainly used for single-ended SMPS, monitors, computers and industrial applications.

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stp7nc80z is a n-channel 800v - 1.3Ω - 6.5a to-220/fp/d2pak/i2pak zener-protected powermesh™iii mosfet from dinghao brand, with very low gate input resistance and minimized gate charge.

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This document introduces the STP7NC70Z and STB7NC70Z series of N-channel 700V power MOSFETs, which have a typical on-resistance of 1.1Ω, extremely high dv/dt and capacitance capability, and integrated back-to-back Zener diodes. They are mainly used in single-ended SMPS, monitors, computers, industrial equipment, and welding equipment.

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The document introduces the features and characteristics of the STP7NC70Z and STB7NC70Z series products, including N-CHANNEL 700V power MOSFETs, extremely high dv/dt and capability, and PowerMESH™III technology with Zener protection.

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STP7NC40 is an N-channel MOSFET from ST, with a rated voltage of 400V and a rated current of 6A. The typical on-resistance is 0.75 ohms and it is packaged in a TO-220 package.

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The STP7NC40 is a N-channel 400V-0.75Ω-6A TO-220 PowerMESH™II MOSFET. It features a typical RDS(on)=0.75Ω, exceptional dv/dt capability, 100% avalanche tested and low gate charge.

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STP75NF75L/-1 is an N-channel MOSFET from STMicroelectronics. It has a rated drain-source voltage of 75 V, a typical on-resistance of 0.009 ohms, and a maximum continuous current of 75 A. This MOSFET is suitable for applications such as solenoid and relay drivers, DC motor control, DC-DC converters, and automotive electronics.

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The STP75NF75L is a N-CHANNEL 75V - 0.009 Ω - 75A D2PAK/I2PAK/TO-220 STripFET™ II POWER MOSFET from STMicroelectronics. It features a TYPICAL RDS(on) = 0.009Ω, EXCEPTIONAL dv/dt CAPABILITY, 100% AVALANCHE TESTED and LOW THRESHOLD DRIVE. It is especially suitable for use as primary switch in advanced high- efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications.

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STP7NB30 is a high-performance N-channel MOSFET designed by STMicroelectronics with a typical RDS(on) of 0.75 ohms, exceptional avalanche and dv/dt capabilities, 100% avalanche tested, very low intrinsic capacitances and minimized gate charge. Applications include high current, high speed switching, switch mode power supplies (SMPS), welding equipment and uninterrupted power supplies and motor drives.

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STMicroelectronics announces the STB7N52K3 to STP7N52K3 series N-channel 525 V, 0.84Ω, 6.3 A SuperMESH3™ Power MOSFETs. These devices integrate ST's established PowerMESH™ layout with a further fine tuning and new optimization of the vertical structure, combining a significant on-resistance reduction over previous generation with special attention to ensure a very good dv/dt capability and higher margin in breakdown voltage for the most demanding application.

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The STP75NS04Z is an N-channel, clamped, TO-220 power MOSFET from ST. It features a RDS(on) of 7mΩ and an ID of 80A.

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This datasheet presents the characteristics of the STB75NF75, STP75NF75 and STP75NF75FP N-channel power MOSFET series manufactured with STMicroelectronics unique STripFET™ process. This series is designed to minimize input capacitance and gate charge, making it suitable for use as primary switch in advanced high-efficiency, high-frequency isolated DC-DC converters for Telecom and Computer applications. It is also intended for any applications with low gate drive requirements.

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This document introduces the N-channel 75V power MOSFETs P75NF75, STB75NF75, STP75NF75, and STP75NF75FP produced by STMicroelectronics. This series of products adopts STMicroelectronics' unique STripFET™ process, which has the characteristics of low input capacitance and gate charge, and is suitable for applications such as high-efficiency, high-frequency isolated DC-DC converters, solenoid and relay drivers.

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TIP132 TIP135 TIP137 is a silicon Epitaxial-Base NPN power transistor in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. It is intented for use in power linear and switching applications.

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TIP122FP and TIP127FP are complementary silicon power Darlington transistors produced by STMicroelectronics. They come in a fully insulated package and are suitable for power linear and switching applications.

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TIP122FP and TIP127FP are a complementary pair of silicon power Darlington transistors, suitable for power linear and switching applications. They have fully molded isolated packages and 2000 V DC isolation. TIP122FP is the NPN type, and TIP127FP is the PNP type.

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