SGS-THOMSON Manuals

stp6na60 is a mosfet from dinghao. it has low on-resistance, low gate charge and superior switching performance. it is suitable for high current, high frequency switching applications such as switch mode power supplies and inverters.

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STP6N60FI is a power MOS transistor with N-channel enhancement mode, typical RDS(on) = 1Ω, 100% avalanche tested, suitable for high current, high-speed switching applications.

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This document describes the features and characteristics of the STP6N60FI N-channel enhancement mode power MOS transistor, including low on-resistance, high voltage withstand, high-speed switching, and reliability testing. It is suitable for high current, high-speed switching applications such as switch mode power supplies, chopper regulators, converters, motor control, and lighting for industrial and consumer environments.

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This document provides information about spot inventory, technical data, encyclopedia information, and hot news, as well as the exciting features and characteristics of products from Dinghao company.

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This page shows all models of spot inventory information, technical data, encyclopedia information, hot news, welcome to come to Dinghao to buy!

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STP6N25 STP6N25FI is a power MOS transistor from Dinghao. It is a N-channel enhancement mode and has a typical RDS(on) of 0.7Ω. The product is used in high speed switching, uninterruptible power supply (UPS), motor control, audio amplifiers, industrial actuators, DC-DC and DC-AC converters for telecom, industrial and consumer environments, and is particularly suitable for electronic fluorescent lamp ballasts.

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This document describes the features and characteristics of the STP6N25 and STP6N25FI N-channel enhancement mode power MOS transistors, including typical on-resistance, avalanche rugged technology, application areas, etc.

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The STP6LNC60 is a 600V, 1 Ohm Ron, 5.8A N-channel PowerMesh™II MOSFET with extremely high dv/dt capability, 100% avalanche tested, a new high voltage benchmark, and minimized gate charge.

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STP80N05-09 is a N-channel enhancement mode ultra-high density power MOS transistor from Dinghao. It has a typical RDS(on) of 7 mΩ, avalanche rugged technology, low gate charge, high current capability and a working temperature of 175 °C. It is used in synchronous rectifiers, high current, high speed switching and DC-DC&DC-AC converters.

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The STP80N03L-06 is a high-performance N-channel enhancement mode ultra high density power MOSFET from STMicroelectronics. This device features an excellent on-resistance (RDS(on)) and high breakdown voltage, making it suitable for stable operation in high-temperature, high-voltage applications. The STP80N03L-06 is suitable for a wide range of high-frequency, high-power applications, such as motor control, DC-DC converters, and inverters.

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STP80N03L-06 is a N-channel enhancement mode Ultra High Density Power MOS Transistor from Texas Instruments. Its features are typical RDS(on) is 0.005 ohms, with high voltage stress, large current capacity, wide operating temperature range and so on, which can be applied to high frequency, high power switching circuits, motor drive, DC-DC/DC-AC converters etc.

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This document describes the features and characteristics of the STP7NB60 and STP7NB60FP N-channel enhancement mode PowerMESH MOSFETs. These MOSFETs utilize the latest high voltage MESH OVERLAY process and offer extremely high dv/dt capability, very low intrinsic capacitances, and minimized gate charge. They are suitable for high current, high speed switching, switch mode power supplies, DC-AC converters for welding equipment and uninterruptible power supplies, and motor drive applications.

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This document describes the features of STP7NB40 and STP7NB40FP, two N-channel enhancement mode PowerMESH MOSFETs. These devices are designed using the latest high voltage MESH OVERLAY process and exhibit outstanding performance. They have extremely high dV/dt capability, are 100% avalanche tested, have very low intrinsic capacitances, and minimized gate charge and switching characteristics.

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STP7NB40 is a N-channel enhancement mode power MOSFET produced by Philips company, it has the lowest RDS(on) of 0.75 ohms, extremely high dv/dt capability, 100% avalanche tested, very low intrinsic capacitances, minimized gate charge. The product is mainly used in high current, high speed switching, switch mode power supplies (SMPS), inverters and other fields

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STP7NA60 is an N-channel enhancement mode fast power MOS transistor with low on-resistance and gate charge, superior reliability, and switching performance.

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STP7NA60 is a high voltage power MOSFET produced by Dinghao Technology. Its features are low on-resistance, high switching speed, and is suitable for high current and high frequency switching applications.

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STP7NA40STP7NA40FI is a fast power MOSFET produced by Dinghao Semiconductor. The typical RDS(on) is 0.82 ohms, the ±30V gate-source voltage rating, 100% avalanche tested, repetitive avalanche data at 100oC, low intrinsic capacitances, minimized gate charge, and reduced threshold voltage spread. Applications include high current, high speed switching, switch mode power supplies (SMPS), welding equipment and uninterruptible power supplies and motor drives.

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STP7NA40 / STP7NA40FI N-channel enhancement mode fast power MOS transistor features typical RDS(on) = 0.82 ohm, ±30V gate to source voltage rating, 100% avalanche tested, repetitive avalanche data at 100oC, low intrinsic capacitances, minimized gate charge and reduced threshold voltage spread.

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TIP130/131/132 TIP135/136/137 are silicon epitaxial-base NPN power transistors in monolithic Darlington configuration, mounted in Jedec TO-220 plastic package. They are intented for use in power linear and switching applications. The complementary PNP types are TIP135, TIP136 and TIP137.

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The L7800 series of positive voltage regulators has an output current of up to 1.5A and output voltages of 5V, 5.2V, 6V, 8V, 8.5V, 9V, 12V, 15V, 18V, and 24V. It features thermal overload protection, short circuit protection, and output transition safe area protection.

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