ST Manuals (Industrial)

L6563 and L6563A are advanced transition-mode PFC controllers with features like precise adjustable output overvoltage protection, tracking boost function, protection against feedback loop failure, interface for cascaded converter's PWM controller, input voltage feedforward, inductor saturation detection (L6563 only), remote ON/OFF control, low start-up current, etc. They are suitable for applications such as high-end AC-DC adapter/charger, desktop PC, server, WEB server, IEC61000-3-2 or JEIDA-MITI compliant SMPS with power exceeding 350W.

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The document introduces the features and characteristics of L6562, including BCD technology, transition mode control, proprietary multiplier design, adjustable output overvoltage protection, ultra-low startup current, and low quiescent current.

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This document provides preliminary information on a new product that is currently under development or evaluation. The details of the product are subject to change. The product is a transition-mode power factor correction (PFC) controller with features such as a proprietary multiplier design for minimum total harmonic distortion, adjustable output overvoltage protection, ultra-low startup current, low quiescent current, and more. It is suitable for applications such as PFC pre-regulators for IEC61000-3-2 compliant SMPS, high-end AC-DC adapter/charger up to 400W, electronic ballast, entry-level server, and web server.

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L6562A is a transition-mode PFC controller from ST with the following features: proprietary multiplier design for minimum thd, very accurate adjustable output overvoltage protection, ultra-low (30µA) start-up current, low (2.5mA) quiescent current, digital leading-edge blanking on current sense, disable function on E/A input, 1.4% (@ TJ = 25 °C) internal reference voltage, -600/+800mA totem pole gate driver with active pull-down during UVLO and voltage clamp.

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L6562 is a transition-mode PFC controller from Texas Instruments. The device is manufactured in BCD technology and features low startup current, low quiescent current, extended IC supply voltage range, on-chip filter on current sense, disable function, 1% (@ Tj = 25°C) internal reference voltage, -600/+800mA totem pole gate driver with UVLO pull-down and voltage clamp. The device is used in PFC pre-regulators for IEC61000-3-2 compliant SMPS (TV, desktop PC, monitor) and other devices.

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L6561 is the improved version of the L6560 standard Power Factor Corrector. It has a superior performance multiplier, making the device capable of working in wide input voltage range applications (from 85V to 265V) with an excellent THD. Furthermore the start up current has been reduced at few tens of mA and a disable function has been implement- ed on the ZCD pin, guaranteeing lower current consumption in stand by mode. Realised in mixed BCD technology, the chip gives the following benefits: – micro power start up current – 1% precision internal reference voltage – (Tj = 25°C) – Soft Output Over Voltage Protection – no need for external low pass filter on the cur- rent sense – very low operating quiescent current minimis- es power dissipation

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L6561 is the improved version of the L6560 standard Power Factor Corrector. Fully compatible with the standard version, it has a superior performing multiplier making the device capable of working in wide input voltage range applications (from 85V to 265V) with an excellent THD. Furthermore the start up current has been reduced at few tens of mA and a disable function has been implement- ed on the ZCD pin, guaranteeing lower current consumption in stand by mode. Realised in mixed BCD technology, the chip gives the following benefits: – micro power start up current – 1% precision internal reference voltage – (Tj = 25°C) – Soft Output Over Voltage Protection – no need for external low pass filter on the cur- rent sense – very low operating quiescent current minimis- es power dissipation The totem pole output stage is capable of driving a Power MOS or IGBT with source and sink cur- rents of ±400mA. The device is operating in tran- sition mode and it is optimised for Electronic Lamp Ballast application, AC-DC adaptors and SMPS.

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This document introduces the technical parameters and characteristics of BTA12 B/C BTB12 B/C triacs, including maximum operating temperature, maximum current, insulation voltage, etc.

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This document describes the features and characteristics of the N-channel enhancement mode fast power MOS transistors of STP6NA80 and STP6NA80FI models, including low RDS(on) and gate charge, unmatched ruggedness, and superior switching performance.

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The STP6LNC60/STP6LNC60FP is a 600V-1Ω-5.8A N-channel MOSFET, which is used in high current, high speed switching, switch mode power supplies (SMPS), DC-AC converters for welding equipment and uninterruptible power supplies, and motor drives.

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STD65NF06 STP65NF06 N-channel 60V - 11.5mΩ - 60A - DPAK/TO-220 STripFET™ II Power MOSFET is a new power MOSFET from STMicroelectronics. It has standard level gate drive, 100% avalanche tested, and is suitable for switching applications.

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STP62NS04Z is a N-channel CLAMPED MOSFET produced by Lingtong Technology. It has the characteristics of low RDS(on), 100% avalanche tested and 175°C maximum junction temperature, which is suitable for harsh environments such as automotive electronics.

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This document is the datasheet of STP62NS04Z N-channel clamped 12.5mΩ - 62A - TO-220 Fully protected MESH OVERLAY™ Power MOSFET

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STP60NS04ZB N-channel clamped - 10mΩ - 60A - TO-220 Fully protected Mesh Overlay™ Power MOSFET is the latest developed product of ST company. It has features of 100% avalanche tested, low capacitance and gate charge, 175℃ maximum junction temperature. This product is suitable for automotive and other harsh environments.

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This document describes the technical characteristics of the STP60NS04ZB N-CHANNEL CLAMPED 10mΩ - 60A TO-220 FULLY PROTECTED MESH OVERLAY™ MOSFET dated 1/8 November 2002. The product is produced using advanced Mesh Overlay technology and has additional clamping capabilities, making it suitable for applications in harsh environments such as automotive.

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This document describes the features and characteristics of the STP60NS04Z N-channel clamped MOSFET, including low on-resistance, 100% avalanche tested, low capacitance and gate charge, and a maximum junction temperature of 175℃. This product is produced using the latest Mesh Overlay process and is suitable for automotive environments and other applications requiring extra ruggedness.

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