IXYS Manuals (Industrial)

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This file provides detailed information on MCC 26 MCD 26 products, including maximum current, maximum voltage, maximum power, working temperature, etc.

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This document introduces a series of products from IXYS, including features such as international standard package, direct copper bonded Al2O3-ceramic base plate, planar passivated chips, etc. These products have advantages such as space and weight savings, simple mounting, improved temperature and power cycling, etc. They are suitable for applications such as DC motor control, softstart AC motor controller, light, heat and temperature control.

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This document describes the features and characteristics of a specific model of diode/thyristor manufactured by IXYS, including maximum rated current, maximum rated voltage, maximum power, etc.

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This datasheet provides the maximum current, reverse voltage, gate current and other parameters of MCC 21-08io8 B, MCC 21-12io8 B, MCC 21-14io8 B, MCC 21-16io8 B models.

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This file is about MCC 19-xxio1 B / MCC 19-xxio8 B series product parameters, including ITRMS, ITAVM, VRRM, VRSM, VDSM, VDRM, Test Conditions, Maximum Ratings, ITSM, ITSM, �i2dt, (di/dt)cr, (dv/dt)cr, PGM, PGAV, VRGM, TVJ, TVJM, Tstg, VISOL, IISOL, Md, Mounting torque, Terminal connection torque, Weight etc.

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This data sheet provides the maximum ratings of MCC 19-08io1 B and MCC 19-16io8 B, including ITRMS, ITAVM, VRRM, VRSM, VDSM, VDRM, ITRMS, ITAVM, ITSM, TVJ, TVJM, i2dt, (di/dt)cr, (dv/dt)cr, PGM, TVJ, TVJM, Tstg, VISOL, IISOL, Md, Mounting torque, Terminal connection torque and Weight.

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This is the MCC170-12io1 datasheet, which includes product's maximum ratings, test conditions, features and characteristics, application fields etc.

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This product is a dual bidirectional thyristor with a rated current of 2x300A and a rated voltage of 800-1800V. Product features include international standard packaging, direct copper bonding Al2O3 ceramic base plate, planar passivated chips, 3600V isolation voltage, UL registered, E 72873, keyed gate/cathode twin pins, etc. Product applications include motor control, power converters, heat and temperature control for industrial furnaces and chemical processes, lighting control and contactless switches. Product advantages include space and weight savings, simple installation, improved temperature and power cycling, and reduced protection circuits.

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MCC 122 is a dual thyristor module with a rated current of 300A, a rated voltage of 800-1800V, a rated off-state current of 128A, and a rated off-state voltage of 800V. It features an international standard package and direct copper foil connection.

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The IXDN402/IXDI402/IXDF402 is a dual 2A CMOS high-speed MOSFET driver. It is built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes. The driver features a wide operating range, high peak output current, low propagation delay time, and is suitable for driving MOSFETs and IGBTs, motor controls, line drivers, etc.

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This datasheet provides information about the IXYS DGSK 36-03CS diode, including the package, technical parameters, and applications.

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The 308 VWI 20-06P1 is a Sixpack IGBT module with NPT IGBTs and FRED diodes, and it is suitable for applications such as AC drives and power supplies with power factor correction.

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The document describes the features and characteristics of a product.

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IXFK/IXFN series is a N-channel enhancement mode avalanche rated, high dv/dt, low trr power MOSFET from IXYS. This product has international standard packages, UL 94 V-0 flammability classification, SOT-227B miniBLOC aluminum nitride insulation, low RDS(on) HDMOSTM process, Unclamped Inductive Switching (UIS) rated, Fast intrinsic rectifier and other features. It can be applied to DC-DC converters, synchronous rectification, battery chargers, switched-mode and resonant-mode power supplies, DC choppers, temperature and lighting controls.

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This datasheet provides the maximum ratings, test conditions, VRSM, VRRM, VDSM, VDRM, version etc. of MCC 132-08io1 and MCD 132-08io1.

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This is a datasheet for the IXTH 88N15 high current power MOSFET. It has a maximum voltage of 150V, a maximum current of 88A, and a minimum on-resistance of 22mΩ

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This datasheet provides the technical specifications of IXDP 35N60 B, IXDH 35N60 B and IXDH 35N60 BD1. These IGBTs feature NPT technology, low switching losses, low tail current, no latch up, short circuit capability, positive temperature coefficient for easy paralleling, MOS input, voltage controlled, optional ultra fast diode and international standard package.

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