IXYS Manuals (Industrial)

This document is about the HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching product of IXYS company. This product has the characteristics of Low Qg, Low Intrinsic Rg, Low trr.

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This document mainly introduces the maximum ratings, characteristic values, packages, and application scenarios of the IXFH and IXFM series products.

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The document describes the features and characteristics of the N-channel enhancement mode high dv/dt, low trr, HDMOSTM family products manufactured by IXYS. The products have features such as low RDS(on), high voltage tolerance, and rugged structure. They are suitable for applications such as DC-DC converters, uninterruptible power supplies, battery chargers, switched-mode and resonant-mode power supplies.

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This datasheet provides information on the IXYSEPLUS264TM(IXFB) product, including maximum ratings, characteristic values, features, applications, and advantages.

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This is the IXFC 15N80Q datasheet. IXFC 15N80Q is a Q-class N-channel enhancement mode avalanche rated, high dv/dt, low Qg HiPerFETTM ISOPLUS 220TM MOSFET. It has the following features: Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation - Low drain to tab capacitance(<35pF) - Low RDS (on) - Rugged polysilicon gate cell structure - Unclamped Inductive Switching (UIS) rated - Fast intrinsic Rectifier. Applications include DC-DC converters, battery chargers, switched-mode and resonant-mode power supplies, DC choppers and AC motor control. Advantages include easy assembly: no screws or isolation foils required - Space savings - High power density

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The document describes the features and characteristics of IXYS products, including high power dissipation, isolated mounting surface, low drain to tab capacitance, and low on-resistance.

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This document describes the features and characteristics of the IXFC52N30P model PolarHTTM HiPerFET power MOSFET product from IXYS. It features high power dissipation, isolated mounting surface, 2500V electrical isolation, and low drain to tab capacitance.

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The document describes a N-Channel Enhancement Mode HiPerFETTM MOSFET product from IXYS. This product belongs to the HDMOSTM family and features high dv/dt, low trr. It uses a silicon chip on a Direct-Copper-Bond substrate, which allows for high power dissipation, isolated mounting surface, and 2500V electrical isolation. Additionally, the product has low drain to tab capacitance (<35pF), low RDS (on), and a rugged polysilicon gate cell structure.

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This product is a N-channel enhancement mode avalanche rated, high dv/dt, low trr single die MOSFET with low RDS(on), HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance and fast intrinsic rectifier features.

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IXFE 80N50 is a low RDS(on) and high dv/dt N-Channel Enhancement Mode Avalanche Rated Power MOSFET. It features low RDS(on), rugged polysilicon gate cell structure, UIS rated, low package inductance and fast intrinsic rectifier.

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The document describes the features and characteristics of IXYS products, including RF capability, low gate resistance, shock resistance, low package inductance, and fast intrinsic rectifier. It is suitable for applications such as DC-DC converters, switched-mode power supplies, pulse generators, laser drivers, and RF amplifiers.

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IXGH24N50B/24N60B is a high frequency IGBT produced by IXYS, with high current handling capability, high power density, high switching speed and other characteristics, suitable for AC motor speed control, DC servo and robot drive, DC chopper, uninterruptible power supply, switched mode and resonant mode power supply etc.

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DE375-501N21A RF Power MOSFET is a RF power MOSFET produced by IXYS. Its maximum ratings are VDSS = 500 V, ID25 = 25 A, RDS(on) = 0.22 Ω, and PDC = 940 W. Its features are high isolation voltage (>2500V), excellent thermal transfer, increased temperature and power cycling capability, low gate charge and capacitance, easier to drive, faster switching, low RDS(on), very low insertion inductance (<2nH), and no beryllium oxide (BeO) or other hazardous materials.

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21N50, 24N50, 26N50 are IXYS's N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family series products, with low RDS(on) HDMOSTM process, rugged polysilicon gate cell structure, unclamped inductive switching (UIS) rated, low package inductance-easy to drive and protect, fast intrinsic rectifier etc.

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DSS 25-0025B is a Schottky rectifier produced by IXYS. It has an international standard package, very low VF, extremely low switching losses, low IRM values, epoxy meets UL 94V-0. Applications include rectifiers in switch mode power supplies (SMPS) and free wheeling diodes in low voltage converters.

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the ixys IXGH20N30 is a high power density and high switching speed igbt, suitable for ac motor speed control, dc servo and robot drives, dc choppers, ups, switched-mode and resonant-mode power supplies.

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