Freescale Semiconductor Technical Data Manual

Update: 28 September, 2023

This document describes the features and characteristics of MRF5S21090HR3 and MRF5S21090HSR3 RF power field effect transistors. They are N-channel enhancement-mode lateral MOSFETs designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. They are suitable for TDMA, CDMA, and multicarrier amplifier applications. They can be used in Class AB for PCN-PCS/cellular radio and WLL applications. The document also provides typical values for 2-carrier W-CDMA performance. The products feature high power gain, low thermal resistance, integrated ESD protection, RoHS compliance, etc.

Brand: Freescale

File format: PDF

Size: 440 KB

MD5 Checksum: 0BA6709DD56738E565318D480AD99F5F

Publication date: 29 December, 2011

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PDF Link: Freescale Semiconductor Technical Data Manual PDF

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