TOSHIBA Manuals (Industrial)

This document describes the features and characteristics of TOSHIBA GT60J322 insulated gate bipolar transistors, including enhancement mode, low saturation voltage, and maximum ratings.

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GT60J321 is a silicon N channel IGBT produced by Toshiba. It is a fourth generation soft switching application that features enhancement mode, high speed and low saturation voltage.

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CRS09 is a Schottky diode produced by Toshiba, with an average forward current rating of 1.5A and a reverse peak voltage rating of 30V.

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This document describes the features and characteristics of the CRS08 TOSHIBA Schottky Barrier Rectifier, which is suitable for switching mode power supply, portable equipment, and battery applications. It has a low forward voltage, moderate average forward current, and repetitive peak reverse voltage.

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The SSM3K17FU is a high voltage, high frequency switch field effect transistor with a small package and high reliability.

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SSM3K17FU is a high-end field effect transistor produced by Toshiba. It features high voltage, high speed and high density, and is suitable for high-density mounting, high-voltage switching and analog switching applications.

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SSM3K16TE is a N-channel MOSFET produced by Toshiba. It features high switching speed and low on-resistance, making it suitable for high-density packaging and analog switch applications.

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SSM3K16FU is a N-channel MOSFET transistor produced by Toshiba. It is suitable for high-density mounting and high-performance switching applications. Its features are low on resistance, the maximum working voltage is 20V, the maximum working current is 100mA, and the maximum power consumption is 150mW.

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SSM3K15FU is a TOSHIBA field effect transistor suitable for high-speed switching and analog switch applications. It features a small package and low on-resistance.

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This document describes the TOSHIBA SSM3K14T field effect transistor, which is a small package product used for high-speed switching applications in DC-DC converters. It features low ON-resistance and high speed switching.

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SSM3K11T is a Toshiba field-effect transistor silicon N-channel MOS type (lateral) device. It is suitable for high-speed switching applications in DC-DC converters, featuring ultra-high-speed switching, low reverse transfer capacitance, thin package, and low ON-resistance.

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This document describes the features and characteristics of the SSM3K09FU field effect transistor from TOSHIBA. It is designed for high-speed switching applications and features a small package and low on-resistance.

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This document describes the features and characteristics of TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM3K09FU, which is suitable for high-speed switching applications and has small package size and low on-resistance.

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This document describes the features and characteristics of the TOSHIBA SSM3K05FU field effect transistor, including small package size, low on resistance, and low gate threshold voltage.

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