Siemens Manuals (Industrial)

The BTS 730 is a PWM power unit used for continuous power control of lamps, LEDs, or inductive loads. It features a high-side switch, overtemperature protection, short circuit/overload protection, undervoltage and overvoltage shutdown, reverse battery protection, etc.

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The document introduces the inventory, technical information, encyclopedia information, and hot news of Dinghao. It also provides detailed information about PROFET BTS 728 L2 semiconductor, including its channel quantity, operating voltage, impedance, load current, and protection functions.

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PROFET® BTS 726 L1 is a high side power switch produced by Texas Instruments, which has overload protection, current limitation, short circuit protection, thermal shutdown, overvoltage protection (including load dump) and other characteristics.

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This document describes the features of the PROFET® BTS 726 L1 Semiconductor Group 1 06.96, including overload protection, current limitation, short-circuit protection, thermal shutdown, overvoltage protection, etc. It is a µC compatible power switch with diagnostic feedback for 12V and 24V DC grounded loads. It can replace electromechanical relays and discrete circuits.

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This document introduces the features and characteristics of BTS 725 L1 smart two-channel high-side power switch.

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This document describes the features and characteristics of a smart two-channel high-side power switch called PROFET® Preliminary BTS 725 L1, including overload protection, current limitation, short-circuit protection, thermal shutdown, overvoltage protection, etc. It is suitable for 12V DC grounded loads, especially resistive and lamp loads. The product can replace electromechanical relays and discrete circuits.

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PROFET® BTS721L1 4-channel high-side power switch features overload protection, current limitation, short-circuit protection, thermal shutdown, overvoltage protection (including load dump), fast demagnetization of inductive loads, reverse battery protection, undervoltage and overvoltage shutdown with auto-restart and hysteresis, open drain diagnostic output, open load detection in ON-state, CMOS compatible input, loss of ground and loss of Vbb protection, electrostatic discharge (ESD) protection.

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Provide technical data for PROFET® BTS720L1 Smart Four Channel Highside Power Switch, including product features, application scenarios, pin definitions and functions, and usage precautions.

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ProFET® BTS720L1 is a Smart Four Channel Highside Power Switch featuring overload protection, current limitation, short-circuit protection, thermal shutdown, overvoltage protection (including load dump), reverse battery protection, undervoltage and overvoltage shutdown with auto-restart and hysteresis, open drain diagnostic output, open load detection in ON-state, CMOS compatible input, loss of ground and loss of Vbb protection, electrostatic discharge (ESD) protection. It is suitable for 12 V DC grounded loads with diagnostic feedback for µC compatible power switch, and most suitable for resistive and lamp loads, which can replace electromechanical relays and discrete circuits.

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This document describes the features and characteristics of the high-performance power combi controller TDA 16888, including the functions and operating modes of the PFC section and PWM section.

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This data sheet describes the features and characteristics of the high performance power combi controller TDA 16888.

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BFP 93A is a NPN Silicon RF Transistor supplied by Dinghao Electronics, which is suitable for low distortion broadband amplifiers and oscillators up to 2GHz at collector currents from 5 mA to 30 mA

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This document describes the features of BFP 81 NPN Silicon RF Transistor, which is suitable for low-noise amplifiers with collector currents ranging from 0.5 mA to 20 mA and a frequency range of up to 2 GHz.

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BFP 81 NPN Silicon RF Transistor is a low-noise amplifier from Dinghao that is suitable for collector currents from 0.5 mA to 20 mA.

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The BFP 520 is a NPN silicon RF transistor from Siemens with a transition frequency of 45 GHz. It can be used for the highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V, as well as for oscillators up to 15 GHz.

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BFP 490 is a NPN silicon RF transistor produced by Siemens Germany. It is mainly used in high power amplifiers, with a compression point of P-1dB of 26.5 dBm, a maximum gain of 9.5 dB, and a transition frequency of fT of 17 GHz.

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The BFP 490 is a NPN silicon RF transistor manufactured by Texas Instruments. Its features are compression point P-1dB of 26.5 dBm, maximum available gain Gma of 9.5 dB and transition frequency fT over 17 GHz. The gold metallization ensures high reliability.

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This document describes the features and characteristics of the SIEGET 25 NPN Silicon RF Transistor from BFP 450 Semiconductor Group, including medium power amplifiers, compression point P-1dB, maximum available gain Gma, noise figure F, transition frequency fT, etc.

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BFP 420 is a Siemens NPN Silicon RF Transistor with a transition frequency of 25 GHz. It is suitable for high gain low noise amplifiers and oscillators up to 10 GHz.

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BB 689 is a silicon tuning diode produced by Texas Instruments (TI). It is suitable for VHF 2-Band-hyperband-TV-tuners. It has a very high capacitance ratio, low series inductance and series resistance, and excellent uniformity and matching in an extremely small plastic SMD package.

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