Philips Manuals (Industrial)

BZB784 series is low-power voltage regulator diodes in a small SOT323 (SC-70) package.

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BFG97 NPN 5 GHz wideband transistor is an NPN type transistor produced by Philips Semiconductors, with a SOT223 package, which is mainly used in MATV applications.

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The BFG94 is a NPN 6 GHz wideband transistor produced by Philips Semiconductors. It has high power gain, low noise figure and low intermodulation distortion. It is packaged in SOT223 and is primarily intended for use in communication and instrumentation systems.

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The BFG92A/X is a NPN dual-emitter 5GHz wideband transistor manufactured by Philips Semiconductors. It features high power gain and low noise figure, and is suitable for wideband applications in the UHF and microwave range.

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The BFG92A/X is a NPN 5 GHz wideband transistor from Philips Semiconductors. It features high power gain, low noise figure, and gold metallization ensures excellent reliability. It is used in wideband applications in the UHF and microwave range.

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The BFG67W is a NPN 8GHz wideband transistor from Philips Semiconductors. It features high power gain and low noise figure, and is intended for wideband applications in the GHz range such as analog satellite television systems and portable RF communication equipment.

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This document describes the features and characteristics of the BFG67 series NPN 8 GHz wideband transistors, including high power gain, low noise figure, high transition frequency, and excellent reliability due to gold metallization. These products are suitable for wideband applications in the GHz range, such as satellite TV tuners and portable RF communications equipment.

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This document describes the features and characteristics of the BFG591 NPN 7 GHz wideband transistor, including high power gain, low noise figure, high transition frequency, and gold metallization for excellent reliability. The product is intended for applications in the GHz range such as MATV or CATV amplifiers and RF communications subscriber equipment.

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This document describes the features of the NPN 5 GHz wideband transistors BFG590 and BFG590/X, including high power gain, low noise figure, high transition frequency, and gold metallization for excellent reliability. They are suitable for use in MATV/CATV amplifiers and RF communications subscriber equipment in the GHz range, ideally suitable for use in class-A, (A)B and C amplifiers with either pulsed or continuous drive.

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Philips BFG541 NPN 9 GHz wideband transistor, features high power gain, low noise figure, high transition frequency, gold metallization ensures excellent reliability

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The BFG540W is a NPN 9 GHz wideband transistor with high power gain, low noise figure and high transition frequency. It is suitable for RF front end wideband applications such as analog and digital cellular telephones, cordless telephones (CT2, CT3, PCN, DECT, etc.), radar detectors, pagers, satellite television tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fiber-optic systems.

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This document describes the features and characteristics of the BFG540 series wideband transistors, including high power gain, low noise figure, high transition frequency, and gold metallization for excellent reliability. These transistors are intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones, radar detectors, satellite TV tuners, MATV/CATV amplifiers, and repeater amplifiers in fiber-optical systems.

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This data sheet introduces the features and characteristics of the BFG520/X/XR model NPN 9GHz wideband transistor products, including high power gain, low noise figure, and high transition frequency. The product is suitable for applications in the GHz range of the RF front end, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, pagers and satellite TV tuners (SATV) and repeater amplifiers in fiber-optic systems.

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This document describes the features and characteristics of the BFG520 series NPN 9 GHz wideband transistors, including high power gain, low noise figure, and high transition frequency. They are intended for applications in the RF frontend in the GHz range, such as analog and digital cellular telephones, cordless telephones, radar detectors, pagers, satellite TV tuners, and repeater amplifiers in fibre-optic systems.

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