Fairchild Manuals (Industrial)

This document describes the features and characteristics of the FDN358P P-Channel Logic Level Enhancement Mode Field Effect Transistor, released in March 1998. It includes information about its maximum voltage, maximum power dissipation, operating temperature range, etc.

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FDN357N is a N-channel logic level enhancement mode power field effect transistor produced by Fairchild. It uses the industry standard SOT-23 package with excellent thermal and electrical properties and high density cell design. It can provide extremely low RDS(ON).

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This document is about FDN352AP's technical information. The product is a P-channel MOSFET with extremely low R DS(ON) and SOT-23 package. It is suitable for low voltage and battery powered applications

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FDN352AP is a low power P-channel logic level MOSFET manufactured by Fairchild Semiconductor. This device is produced using Fairchild Semiconductor's advanced Power Trench process, which provides extremely low on-state resistance and low gate charge for superior switching performance.

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This document is the datasheet for FDN352AP, introducing the characteristics and applications of FDN352AP

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FDN352AP is a low-voltage low-side MOSFET produced by Fairchild Semiconductor. It features extremely low on-state resistance and high power handling capability, making it suitable for notebook computer power management applications.

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This datasheet provides the FDN342P's specification information, including: product model, package type, pin arrangement, maximum working voltage, maximum working current, maximum working power, working temperature range, package size, etc.

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FDN342P is a high-voltage, low-leakage N-channel MOSFET from Dinghao. The maximum drain-source voltage for this product is -20V, the maximum gate-source voltage is ±12V, and the maximum drain current is -2A. The power dissipation for this product is 0.5W, and the operating temperature range is -55 to +150 degrees Celsius.

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FDN340P is a P-Channel Logic Level MOSFET produced by Fairchild Semiconductor using the company's advanced Power Trench process. This process has been specially tailored to minimize the on-state resistance while maintaining low gate charge for superior switching performance. These devices are well suited for portable electronics applications: load switching and power management, battery charging circuits, and DC/DC conversion.

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FND340P is a single P-channel, logic level, PowerTrench MOSFET from Fairchild Semiconductor. The device features extremely low RDS(ON), low gate charge, and is well suited for portable electronic applications, such as load switching and power management, battery charging circuits and DC/DC conversion.

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This document describes the features and characteristics of a P-Channel Logic Level MOSFET. The MOSFET is produced using advanced Power Trench process, which minimizes the on-state resistance and maintains low gate charge for superior switching performance. It is well suited for portable electronics applications such as load switching and power management, battery charging circuits, and DC/DC conversion.

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The FDN339AN N-Channel 2.5V Specified PowerTrench   MOSFET is a high-performance trench technology N-channel MOSFET from Fairchild Semiconductor. It features extremely low on-state resistance and low gate charge, making it ideal for applications such as DC/DC converters and load switches.

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This document describes a single-channel P-channel logic level PowerTrench MOSFET product, produced using Fairchild Semiconductor's advanced process, which features low on-state resistance, low gate charge, and superior switching performance. It is suitable for portable electronic devices applications, such as load switching and power management, battery charging circuits, and DC/DC conversion.

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This document describes a N-Channel MOSFET power field effect transistor called FQPF19N10. The device is produced using advanced DMOS technology and features low on-state resistance, superior switching performance, and high energy pulse tolerance. It is suitable for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control.

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FQPF19N10L is a 100V LOGIC N-Channel MOSFET with features such as 13.6A, 100V, RDS(on) = 0.1Ω @VGS = 10 V.

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FQPF19N10L is an N-channel MOSFET produced by Fairchild Semiconductor. Its maximum voltage is 100V and its typical on-state resistance is 0.1 ohm. It can be used in applications such as high efficiency switching DC/DC converters and DC motor control.

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This document introduces QFET's stock, technical data, encyclopedia information and hot news

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This document describes FQPF20N06, a 60V N-Channel MOSFET produced using Fairchild's proprietary DMOS technology. It features low on-state resistance, superior switching performance, and high energy pulse withstand capability. This device is suitable for low voltage applications in automotive, DC/DC converters, and portable battery-operated products.

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FQPF1P50 is a 500V P-channel MOSFET produced by Fairchild. It features low on-state resistance, fast switching, low gate charge and high surge current.

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