NEC Manuals (Industrial)

This document describes the features and characteristics of the 2SK3113B N-channel MOS FET device, designed for high voltage applications such as switching power supply and AC adapter.

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The 2SC4885 is a low voltage, low noise, high performance NPN silicon transistor that is suitable for RF and microwave applications. It features low voltage operation, high integration and high reliability.

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The EA2 series miniature signal relay has a reduced package size and power consumption to other NEC Conventional relays. Furthermore, it complies with 1500 V surge-voltage requirement of FCC part 68 by the unique structure and the efficient magnetic circuit.

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The document describes the features and characteristics of the µPD23C32000AL, a 32M-bit mask-programmable ROM. It has selectable word organization (BYTE mode: 4,194,304 words by 8 bits, WORD mode: 2,097,152 words by 16 bits). It also provides information on operating supply voltage, access time, power supply current, and other parameters.

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UPA836TC NPN Silicon Epitaxial Twin Transistor features a small package outline and low height profile to achieve excellent electrical performance.

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µPD16805 is a H-bridge driver IC from Toshiba that is used to drive camera motors. The driver has forward, reverse, and brake functions and is ideal for driving film advance or rewind motors, and auto focus or zoom motors.

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NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.

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The µPD168110 is a monolithic 2-channel H bridge driver that consists of a CMOS controller and a MOS output stage. It can reduce the current consumption and the voltage loss at the output stage compared with a conventional driver using bipolar transistors, thanks to employment of a MOS process. This product employs a P-channel MOSFET on the high side of the output stage, eliminating a charge pump. As a result, the circuit current consumption can be substantially reduced during operation. This product is ideal for driving the motor of a digital still camera as it can switch over between two-phase excitation driving and microstep driving, using a stepper motor.

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The µPA1724 is an N-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and so on.

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This document describes the features and characteristics of 2SA1221 and 2SA1222 PNP silicon epitaxial transistors, which are suitable for low-frequency power amplifiers such as TV vertical deflection output, audio output, and variable power supplies.

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The 2SA1129 is a mold power transistor developed for mid-speed switching, and is ideal for use as a ramp driver. It has a large current capacity with a small package.

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