Industrial Manuals

CET CEA3252 Transistor

FEATURES 30V, 5A, RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package.

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CET CEA6426 Transistor

FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.

File format: PDF Size:258 KB

Comchip 2N3906-G Transistor

Features -PNP silicon epitaxial planar transistor for switching and amplifier application. -As complementary type, the NPN transistor 2N3904-G is recommended. -This transistor is available in the SOT-23 case with the type designation MMBT3906-G.

File format: PDF Size:107 KB

Comchip 2SC5658-HF Transistor

Features -Low Cob. Mechanical data -Case: SOT-723, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026.

File format: PDF Size:121 KB

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