Industrial Manuals
Comchip 2SC5658-HF Transistor
Features -Low Cob. Mechanical data -Case: SOT-723, molded plastic. -Terminals: solderable per MIL-STD-750, method 2026.
File format:PDF Size:121 KB
Comchip 2N3906-G Transistor
Features -PNP silicon epitaxial planar transistor for switching and amplifier application. -As complementary type, the NPN transistor 2N3904-G is recommended. -This transistor is available in the SOT-23 case with the type designation MMBT3906-G.
File format:PDF Size:107 KB
CET CEA6426 Transistor
FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.
File format:PDF Size:258 KB
CET CEA3252 Transistor
FEATURES 30V, 5A, RDS(ON) = 32mW @VGS = 10V. RDS(ON) = 45mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-89 package.
File format:PDF Size:127 KB
CET CEA6861 Transistor
FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.
File format:PDF Size:129 KB
CET CEA6200 Transistor
FEATURES 60V, 1.8A, RDS(ON) = 250mW @VGS = 10V. RDS(ON) = 330mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. SOT-89 package.
File format:PDF Size:254 KB
CET CEC8218 Transistor
FEATURES 20V, 6.5A, RDS(ON) = 23mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired.
File format:PDF Size:273 KB
CET CEG8205A Transistor
FEATURES 20V, 6.2A, RDS(ON) = 24mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.
File format:PDF Size:271 KB
CET CEG8208 Transistor
FEATURES 20V, 6.2A, RDS(ON) = 22mW @VGS = 4.5V. RDS(ON) = 32mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 for Surface Mount Package. ESD Protected: HBM 2000 V
File format:PDF Size:249 KB
CET CEH2305 Transistor
FEATURES -30V, -4.9A , RDS(ON) = 52mW @VGS = -10V. RDS(ON) = 65mW @VGS = -4.5V. RDS(ON) = 119mW @VGS = -2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead free product is acquired.
File format:PDF Size:258 KB
CET CEH2310 Transistor
FEATURES 30V, 6.2A , RDS(ON) = 33mW @VGS = 10V. RDS(ON) = 38mW @VGS = 4.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package. Lead-free plating; RoHS compliant.
File format:PDF Size:275 KB
CET CEG2288 Transistor
FEATURES 20V, 6.2A, RDS(ON) = 24mW @VGS = 4.5V. RDS(ON) = 34mW @VGS = 2.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TSSOP-8 Package.
File format:PDF Size:139 KB
CET H2288 Transistor
FEATURES 20V, 5.2A , RDS(ON) = 26mW @VGS = 4.5V. RDS(ON) = 35mW @VGS = 2.5V. High dense cell design for extremely low RDS(ON). Rugged and reliable. TSOP-6 package.
File format:PDF Size:214 KB
NXP BLF184XR_BLF184XRS transistor
A 700 W extremely rugged LDMOS power transistor for broadcast and industrial applications in the HF to 600 MHz band.
File format:PDF Size:234 KB
NXP BLF8G24LS-150V 8G24LS-150GV 24LS-100GV transistor
230 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 1800 MHz to 2000 MHz.
File format:PDF Size:294 KB
NXP BLF8G27LS-100 transistor
100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2500 MHz to 2700 MHz.
File format:PDF Size:185 KB
NXP BLP10H605 transistor
A 5 W plastic LDMOS power transistor for broadcast transmitter and ISM applications at frequencies from HF to 1400 MHz.
File format:PDF Size:116 KB
NXP BLF8G09LS-400PW transistor
400 W LDMOS power transistor for base station applications at frequencies from 716 MHz to 960 MHz.
File format:PDF Size:280 KB
NXP BLC8G27LS-100AV transistor
100 W LDMOS packaged asymmetrical Doherty power transistor for base station applications at frequencies from 2490 MHz to 2690 MHz.
File format:PDF Size:113 KB
NXP BLF8G10LS-300P transistor
300 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz.
File format:PDF Size:193 KB