SAMSUNG Manuals

File format: PDF Size:0 KB

The K6F4008U2E is a 512K x8 bit super low power and low voltage full CMOS static RAM produced by Samsung Electronics. It supports industrial temperature range of -40~85℃ and a power supply voltage range of 2.7~3.3V. The minimum standby power consumption is 1.0µA and the maximum operating current is 2mA.

File format: PDF Size:107 KB

This document describes the specifications and features of three models of SDRAM 256Mb E-die products, including storage capacity, interface type, and package form.

File format: PDF Size:201 KB

This document is about K4C89183AF-ACF5 specification, introduces the product features and characteristics, including product technical parameters, performance indicators and so on.

File format: PDF Size:1477 KB

File format: PDF Size:0 KB

S5K3A1EA is a 1/3 inch SXGA CMOS image sensor produced by SAMSUNG with 1280x1024 effective pixels. It is manufactured using a 0.18um CMOS process and has a 10-bit ADC block to digitize pixel output and an on-chip CDS to significantly reduce fixed pattern noise (FPN).

File format: PDF Size:331 KB

File format: PDF Size:388 KB

This document is about KS0063B type product technical specifications, mainly introduces the characteristics of the product, including the product structure, working principle, application scenarios, etc.

File format: PDF Size:222 KB

This is a 128k x 8 bit high-performance cmos static ram with fast access time, low power consumption, high reliability, low cost and small size.

File format: PDF Size:115 KB

The KM62256D Family CMOS SRAM is a 32Kx8 bit low power CMOS static RAM produced by SAMSUNG.

File format: PDF Size:119 KB

512Kx36 & 1Mx18 Pipelined NtRAMTM Datasheet

File format: PDF Size:285 KB

This document describes the features and characteristics of Samsung's K6T1008C2C family of low power CMOS static RAM, including support for various operating temperature ranges and package types for flexible system design, as well as low data retention voltage and low data retention current for battery backup operation.

File format: PDF Size:132 KB

This is a specification sheet for KFG1G16Q2M-DEB5, which includes the product overview, revision history, ordering information, description, operation information, electrical specifications and timing waveforms, application information and technical information, and package dimensions.

File format: PDF Size:1617 KB

KM68V1000B, KM68U1000B Family CMOS SRAM is a low power low voltage CMOS static RAM produced by Samsung Semiconductor. It has three-state output and TTL compatibility, and supports various package types to meet user flexibility in system design.

File format: PDF Size:130 KB

The K6X4016T3F Family CMOS SRAM is a low power and low voltage CMOS static RAM produced by Samsung Electronics.

File format: PDF Size:100 KB

This document is about the specification of the 64Kx16 bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges

File format: PDF Size:184 KB

File format: PDF Size:28 KB

This 2005 PDF document is Samsung's DDR2 memory module specification manual, which provides detailed information on the features and characteristics of Samsung's 256MB, 512MB and 1GB DDR2 memory modules.

File format: PDF Size:440 KB

This document is about 1/4 inch VGA CIS camera module SX5437M21X-X0B0's preliminary specification

File format: PDF Size:267 KB

6 BIT 384 CHANNEL RSDS TFT-LCD SOURCE DRIVER is Samsung's S6C1108, which is a source driver suitable for Reduced Swing Differential Signaling(RSDS) digital interface. It converts 18-bit digital data into the analog voltage for 384 channels, charging each sub-pixel to the correct gray level corresponding to the digital value. The RSDS path to the panel timing controller contributes toward lowering radiated EMI, reducing system power consumption and eliminates one of the two pixel busses used in typical XGA, SXGA TFT LCD panels. This single 9-bit differential bus conveys the 18-bit color data for XGA, SXGA panels.

File format: PDF Size:289 KB