MITSUBISHI Manuals

This application note provides RF characteristics data of MGF0906B.

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This application note shows the RF characteristics data of MGF0952P, including output power, linearity, harmonic distortion, etc.

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This application note shows the RF characteristics data of MGF0951P

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This document shows the RF characteristics data of MGF0921A, including frequency range, power output, and input power.

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This application note shows the RF characteristics data of MGF0915.A, including the results of CW, ACLR, and IMD tests.

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This document presents the RF characteristics of MGF0913A produced by MITSUBISHI Electric Corporation. The measurement conditions include a W-CDMA modulated signal in the frequency range of 800 to 900 MHz.

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This document is about the evaluation board of the RD01MUS2B single-stage amplifier, with a frequency range of 890-941MHz and typical features such as input power of 30mW and output power of 1.5W.

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This application note shows the TETRA data.

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This application note provides design and use information for the RD01MUS2B single-stage amplifier. The amplifier operates in the 135-175MHz frequency range, with a typical input power of 30mW and a typical output power of 1.45W.

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AN-UHF-130 is an application note for Silicon RF Power Semiconductors. It introduces RD04HMS2 & RD70HUF2 two-stage amplifier

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Application Note for RD04HMS2 & RD70HUF2 two-stage amplifier

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This document describes the RF performance of RD00HVS1 and RD02MUS1B 2-stage amplifiers at a frequency range of 400-470MHz and Vdd=7.2V. The evaluation conditions include frequency characteristics, Pout vs. Pin characteristics, and small signal S parameters. The document provides typical data for frequency characteristics, Pout vs. Pin characteristics, and small signal S parameters.

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This application note provides the RF wide band characteristics data (Frequency, Pout vs. Pin, Pout vs. Vgg characteristics) at 135-175MHz band of RD01MUS2 and RD07MUS2B.

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This document describes the features and performance parameters of the RD35HUF2 single-stage amplifier evaluation board, including frequency range, input power, output power, and adjacent channel power ratio.

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This document is an application note for the RD04HMS2 and RD70HUF2 two-stage amplifier at 380-470MHz. It includes features such as an evaluation board, frequency range, input power, output power, etc.

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This document describes the features of the RD70HUF2 single-stage amplifier evaluation board, including frequency range, input power, output power, quiescent current, etc.

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This application note introduces the characteristics of RD35HUF2 single-stage amplifier, including frequency, input power, output power, quiescent current, operating current, surface-mounted RF power amplifier structure, etc.

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This document describes the characteristics and specifications of the RD70HUF2 single-stage amplifier, including frequency, input power, output power, quiescent current, and operating current.

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This RD35HUF2 single-stage amplifier with f=135-175MHz evaluation board application note introduces the features of the evaluation board, including frequency range, input power, output power, quiescent current, operating current, etc.

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AN-900-043-A is an application note about RD04HMS2 single-stage amplifier, which contains equivalent circuit, PCB layout, component list and standard deliverable, thermal design of heat sink, typical RF characteristics.

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