HITACHI Manuals

2SA1171 is a silicon PNP epitaxial transistor used in low frequency small signal amplifiers.

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The 2SA1122 is a low frequency amplifier produced by NXP. Its maximum collector voltage is -55V, its maximum collector-emitter voltage is -55V, its maximum emitter-base voltage is -5V, its maximum collector current is -100mA, its maximum collector power dissipation is 150mW, its junction temperature is 150 °C, and its storage temperature is -55 to +150 °C.

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The document introduces the 2SA1121 Silicon PNP Epitaxial application, which is a low-frequency amplifier and complementary pair with 2SC2618. The document provides detailed information on the absolute maximum ratings and electrical characteristics of the 2SA1121.

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2SA1083, 2SA1084, and 2SA1085 are silicon PNP epitaxial transistors suitable for low frequency low noise amplifiers and complementary pairing with 2SC2545, 2SC2546, and 2SC2547.

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2SA1083, 2SA1084, 2SA1085 are silicon PNP epitaxial transistors suitable for low frequency low noise amplifiers. They are complementary pairs with 2SC2545, 2SC2546, and 2SC2547.

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2SA1052 is a silicon PNP type transistor with low frequency amplifier application

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2SA1031, 2SA1032 are Silicon PNP Epitaxial, applied to low frequency low noise amplifier, is the complementary pair of 2SC458 (LG) and 2SC2310

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This document describes the features and characteristics of 2SA1031 and 2SA1032, including their application as low frequency low noise amplifiers, complementary pairing with 2SC458 (LG) and 2SC2310, etc.

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2SA1029 and 2SA1030 are silicon PNP epitaxial transistors suitable for low frequency amplifiers. They are complementary pairs with 2SC458 and 2SC2308. The features and characteristics include: collector to base voltage ranging from -30V to -55V, collector to emitter voltage ranging from -30V to -50V, emitter to base voltage of -5V, collector current of -100mA, emitter current of 100mA, collector power dissipation of 300mW, and maximum operating temperature of 150°C.

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2SA1025, 2SA1081, 2SA1082 are three silicon PNP type transistors, used in low frequency amplifiers, can be used with 2SC2396, 2SC2543 and 2SC2544.

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This document describes the applications of 2SA1025, 2SA1081, and 2SA1082 silicon PNP epitaxial transistors, including low frequency amplifiers and complementary pairing with 2SC2396, 2SC2543, and 2SC2544.

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2SK1298 is a low on-resistance, high speed switching, low drive current silicon N-channel MOSFET, suitable for motor drive, DC-DC converter, power switch and solenoid drive.

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2SK1296 is a high-speed power switch with low on-resistance, high switching speed and low drive current. It can be driven from a 5V source and is suitable for motor drive, DC-DC converter, power switch and solenoid drive.

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2SK1254(L) and 2SK1254(S) are N-channel MOSFETs suitable for high-speed power switching applications. Their features include low on-resistance, high switching speed, and 4V gate drive capability (can be driven from a 5V source). They are suitable for motor drive, DC-DC converter, power switch and solenoid drive applications.

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2SK1169, 2SK1170 are two high-voltage power switching N-channel MOSFETs with low on-resistance, high switching speed, low drive current, no secondary breakdown, etc., suitable for switching regulators and DC-DC converters.

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This document describes the application of 2SK1167 and 2SK1168 Silicon N-Channel MOS FETs, highlighting their features such as low on-resistance, high speed switching, low drive current, and no secondary breakdown. They are suitable for switching regulators and DC-DC converters.

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2SK1165, 2SK1166 are high voltage, large current N-channel MOSFETs from Toshiba. They are suitable for switching regulators and DC-DC converters. They feature low on-resistance, high switching speed, low drive current and no secondary breakdown.

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2SK1163, 2SK1164 is a high voltage and high current N-channel MOSFET device produced by Toshiba. It is suitable for switching power supplies and DC-DC converters.

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2SK1161, 2SK1162 are N-channel MOSFETs with low on-resistance, high switching speed, low drive current, and no secondary breakdown. They are suitable for switching regulator and DC-DC converter.

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