IXYS Manuals

This datasheet provides information on the maximum ratings, characteristic values, features and applications of HiPerRFTM Power MOSFETs F-Class: MegaHertz Switching N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr.

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DPG 60 C 300 HB is a low leakage current, low recovery time, low power Schottky diode, suitable for anti-parallel diodes, anti-saturation diodes, clamp diodes, freewheeling diodes, rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

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This document provides the characteristics of HiPerRFTM Power MOSFETs F-Class, including maximum voltage, continuous current, transient current, breakdown voltage, breakdown energy, leakage current, switching speed, etc.

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DPG 30 C 400 HB is a high performance Schottky diode in the DPG series. It features very low leakage current, very short recovery time, improved thermal behavior, very low Irm values, very soft recovery behavior and avalanche voltage rating for reliable operation. This diode is suitable for antiparallel diodes for high frequency switching devices, antisaturation diodes, snubber diodes, free wheeling diodes, rectifiers in switch mode power supplies (SMPS) and uninterruptible power supplies (UPS).

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IXTH 20N60 / IXTM 20N60 is a N-channel enhancement mode power MOSFET from IXYS. It features international standard packages, low RDS(on), HDMOSTM process, rugged polysilicon gate cell structure, low package inductance (<5nH), easy to drive and to protect, fast switching times. Applications include switch-mode and resonant-mode power supplies, motor control, Uninterruptible Power Supplies (UPS) and DC choppers.

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The DHG 60 C 600 HB is a high performance fast recovery diode with the following features: very low leakage current, very short recovery time, improved thermal behavior, very low Irm values, very soft recovery behavior, avalanche voltage rated for reliable operation, soft reverse recovery for low EMI/RFI, low Irm reduces power dissipation within the diode and turn-on loss in the commutating switch.

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DHG 40 C 600 HB is a fast recovery diode produced by Philips Semiconductors. It has the characteristics of very low leakage current, very short recovery time, improved thermal behavior, very low Irm values, very soft recovery behavior, rated avalanche voltage for reliable operation, soft reverse recovery for low EMI/RFI, low Irm can reduce: - power dissipation within the diode - Turn-on loss in the commutating switch

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The document describes the symbol definition, ratings, features, and advantages of DHG 40 C 1200 HB advanced ns Sonic Fast Recovery Diode, as well as its applications.

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IXKR 40N60C is a N-channel enhancement mode low RDSon, high VDSS MOSFET in ISOPLUS247TM package with electrically isolated base.

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The document describes the features and characteristics of IXYS products, including high power dissipation, isolated mounting surface, high blocking capability, and low on resistance. The product is suitable for applications such as switched mode power supplies and uninterruptible power supplies.

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The document provides information about the test conditions and maximum ratings of a product manufactured by IXYS in 2004, including voltage, current, power dissipation, and other parameters. The product features a silicon chip on a direct-copper-bond substrate, enabling high power dissipation and isolated mounting surface. Additionally, it offers high blocking capability, low on-resistance, and avalanche rating for unclamped inductive switching. With low thermal resistance and drain to tab capacitance, this product is suitable for applications such as switched mode power supplies, uninterruptible power supplies, power factor correction, welding, and inductive heating.

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