intersil Manuals

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75343.

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This is a 75A, 55V, 0.012 Ohm, N-channel UltraFET power MOSFET. It is manufactured using an advanced process technology that achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.

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This is a 75A, 55V, 0.014 Ohm N-Channel UltraFET Power MOSFETs manufactured using innovative UltraFET™ process with very low reverse recovery time and stored charge.

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This document describes HUF75333G3, HUF75333P3, and HUF75333S3S, which are 66A, 55V, 0.016 Ohm N-Channel UltraFET Power MOSFETs. These devices are manufactured using the innovative UltraFET™ process, which achieves the lowest possible on-resistance per silicon area and delivers outstanding performance. They can withstand high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. These devices are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

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This is a 60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs, manufactured using innovative UltraFET™ process, with very low reverse recovery time and stored charge, suitable for power efficiency-critical applications, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches and power management in portable and battery-operated products.

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HUF75329G3, HUF75329P3, HUF75329S3S 49A, 55V, 0.024 Ohm, N-Channel UltraFET Power MOSFETs are manufactured using the innovative UltraFET™ process by Intersil Corporation. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.

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This document introduces HUF75329D3 and HUF75329D3S, two 20A, 55V, 0.026 Ohm N-Channel UltraFET power MOSFETs. These devices are manufactured using the innovative UltraFET process, achieving the lowest possible on-resistance per silicon area and delivering outstanding performance. They can withstand high energy in avalanche mode and have very low reverse recovery time and stored charge in the diode. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

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This document describes the features and characteristics of HUF75321P3 and HUF75321S3S, two N-Channel UltraFET power MOSFET devices. These devices are manufactured using the advanced UltraFET process, which results in the lowest possible on-resistance per silicon area and outstanding performance. They can withstand high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

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This document describes the HUF75321D3 and HUF75321D3S, which are N-Channel power MOSFETs with a current rating of 20A and a voltage rating of 55V. These MOSFETs are manufactured using the UltraFET™ process, which results in the lowest possible on-resistance per silicon area and excellent performance. They can withstand high energy in avalanche mode and have a diode with low reverse recovery time and stored charge. These devices are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

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The document describes the features and characteristics of the HUF75309T3ST model, which is an N-Channel power MOSFET device. This device is manufactured using the innovative UltraFET process, resulting in low on-resistance, high energy capability, and low reverse recovery time. It is suitable for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

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This document describes the features and characteristics of HUF75309P3, HUF75309D3, and HUF75309D3S, which are N-Channel UltraFET power MOSFET devices. These devices are manufactured using the innovative UltraFET process, which achieves low on-resistance and outstanding performance. They can withstand high energy in avalanche mode, and the diode exhibits low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

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This document describes an N-channel UltraFET power MOSFET, which is manufactured using the innovative UltraFET™ process. The device offers outstanding performance with low on-resistance and low reverse recovery time, making it suitable for applications where power efficiency is important.

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HUF75307P3, HUF75307D3, HUF75307D3S 15A, 55V, 0.090 Ohm, N-Channel UltraFET Power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75307.

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This is a Intersil HUF75229P3 44A, 50V, 0.022 Ohm, N-Channel UltraFET Power MOSFET, which is manufactured using the innovative UltraFET™ process, which achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.

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The X5043, X5045 is a 4K, 512 x 8 Bit CPU Supervisor with 4K SPI EEPROM produced by Intersil. It has functions such as Power-on Reset Control, Watchdog Timer, Supply Voltage Supervision, and Block Lock Protect Serial EEPROM Memory.

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HGTP3N60C3D and HGT1S3N60C3DS are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49113. The diode used in anti-parallel with the IGBT is the development type TA49055. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential.

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The HCTS138MS is an Intersil radiation hardened 3-to-8 line decoder/demultiplexer. Outputs are active in the low state. Two active low and one active high enables (E1, E2, E3) are provided. If the device is enabled, the binary inputs (A0, A1, A2) determine which one of the eight normally high outputs will go to a low logic level. The HCTS138MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS138MS is supplied in a 16 lead Ceramic flatpack (K suffix) or a SBDIP Package (D suffix).

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HCS02MS is a radiation hardened quad 2-input NOR gate from Intersil Corporation. A low on both inputs forces the output to a High state. The HCS02MS utilizes advanced CMOS/SOS technology to achieve excellent radiation hardness and can operate in harsh environments such as high temperature, high voltage and strong electromagnetic fields.

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The ISL8843 is an industry standard single-ended current mode PWM controller that can be used as a drop-in replacement for the popular 28C43 and 18C43 PWM controllers. It is suitable for a wide range of power conversion applications, including boost, flyback, and isolated output configurations. Its fast signal propagation and output switching characteristics make it an ideal product for existing and new designs.

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