Microsemi Manuals

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This PDF document describes a product called TVSarray™ Series, which is a 4-pin 1-line bidirectional ultra-low capacitance array designed for board level protection. The product provides protection for electronic components ranging from 3.3V to 24V, and is suitable for voltage transients caused by electrostatic discharge, electrical fast transients, and secondary lightning. It is packaged in SOT-143 form and weighs approximately 0.035 grams. The product features electrically isolated protection and ultra-low capacitance of 5 pF.

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This 4 pin 1 line unidirectional ULTRA LOW CAPACITANCE array is designed for use in applications requiring board level protection from voltage transients caused by electrostatic discharge (ESD) as defined by IEC 1000-4-2, electrical fast transients (EFT) per IEC 1000-4-4 and effects of secondary lightning.

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This document describes a 16-pin 2-line bidirectional low capacitance array designed for protection at the board level. The product provides protection from voltage transients caused by electrostatic discharge, electrical fast transients, and effects of secondary lighting. It has a peak power of 600 watts for a 10x1000 µsec pulse and is designed for secondary surge protection on telephone lines. It can be used in either common or differential mode applications.

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1N2970-1N3015B 1N3993-1N4000A 10W Zener diodes are available from Microsemi and offer voltage regulation over a wide range of voltages from 3.9V to 200V. They can be operated up to 10W with adequate mounting and heat sinking with their low thermal resistance.

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2N7372 is PNP type, 2N7373 is NPN type, 2N7372 and 2N7373 are complementary power transistors, using isolated TO-254AA package, with high reliability, high frequency, fast switching and other characteristics

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2N7371 is a PNP Darlington high power silicon transistor with a maximum rating voltage of 100V and a maximum collector current of 12A. The operating temperature range is -65 to +175 degrees.

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The 2N7370 JAN series is a high power silicon transistor with a maximum collector-emitter voltage of 100Vdc, a maximum collector-emitter breakdown voltage of 100Vdc, a maximum emitter-base voltage of 5.0Vdc, a maximum base current of 0.2Adc, a maximum collector current of 12Adc, and a maximum total power dissipation of 100W. The operating temperature range is -65 to +175℃.

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This document describes a PNP high power silicon transistor, qualified per MIL-PRF-19500/621 standard. It has a collector-emitter voltage of 80V, a collector-base voltage of 80V, an emitter-base voltage of 7.0V, a base current of 4.0A, a collector current of 10A, and a maximum power dissipation of 115W.

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This document provides technical data for an NPN high power silicon transistor, including maximum ratings, thermal characteristics, and electrical characteristics.

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The LX8221 is a dual 150mA CMOS low dropout regulator from Microsemi. It features low dropout, fast transient performance, tight output voltage accuracy, and ultra-low ground current.

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1N3016B-1N3051B 1 Watt metal case Zener diodes are a well established Zener diode series for the 1N3016 to 1N3051 JEDEC registration in the metal case DO-13 package providing a glass hermetic seal for 6.8 to 200 volts.

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SMCGLCE6.5, SMCGLCE170A, SMCJLCE6.5, SMCJLCE170A are Microsemi’s 1500 watt low capacitance surface mount transient voltage suppressors. They feature low capacitance, low impedance, high peak current, and fast response time. They are suitable for protecting high frequency applications, inductive switching environments or electrical systems involving secondary lightning effects per IEC61000-4-5 as well as RTCA/DO-160D or ARINC 429 for airborne avionics.

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This is a PDF file about NPN silicon transistor. The file contains the product's performance parameters, including maximum ratings, working temperature range, and package types

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