IXYS IXFC 80N10 handbook

Update: 29 September, 2023

The document describes a N-Channel Enhancement Mode HiPerFETTM MOSFET product from IXYS. This product belongs to the HDMOSTM family and features high dv/dt, low trr. It uses a silicon chip on a Direct-Copper-Bond substrate, which allows for high power dissipation, isolated mounting surface, and 2500V electrical isolation. Additionally, the product has low drain to tab capacitance (<35pF), low RDS (on), and a rugged polysilicon gate cell structure.

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Brand: IXYS

File format: PDF

Size: 68 KB

MD5 Checksum: 647C8224D3B1FB4F59EDBD67F91AB7AC

Publication date: 15 June, 2012

Downloads: -

PDF Link: IXYS IXFC 80N10 handbook PDF