intersil HUF76137P3 HUF76137S3S handbook

Update: 30 September, 2023

These N-Channel power MOSFETs are manufactured using the innovative UltraFET™ process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA76137.

Brand: intersil

File format: PDF

Size: 115 KB

MD5 Checksum: 181E528CF58C1BA276C4A28E1AFA1546

Publication date: 11 June, 2012

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PDF Link: intersil HUF76137P3 HUF76137S3S handbook PDF

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