intersil HUF76129P3 HUF76129S3S handbook

Update: 30 September, 2023

This is an N-Channel power MOSFET, manufactured using the innovative UltraFET™ process, with the lowest possible on-resistance per silicon area, resulting in outstanding performance. It is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low- voltage bus switches, and power management in portable and battery-operated products.

Brand: intersil

File format: PDF

Size: 116 KB

MD5 Checksum: 8D21091A928DAABC21FC9637A92E0996

Publication date: 11 June, 2012

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PDF Link: intersil HUF76129P3 HUF76129S3S handbook PDF

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