intersil HUF75329D3 HUF75329D3S handbook

This document introduces HUF75329D3 and HUF75329D3S, two 20A, 55V, 0.026 Ohm N-Channel UltraFET power MOSFETs. These devices are manufactured using the innovative UltraFET process, achieving the lowest possible on-resistance per silicon area and delivering outstanding performance. They can withstand high energy in avalanche mode and have very low reverse recovery time and stored charge in the diode. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Brand: intersil

File format: PDF

Size: 130 KB

MD5 Checksum: 3A67759B2411DA1032FDC893A59211A9

Publication date: 11 June, 2012

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