intersil HUF75321P3 HUF75321S3S handbook

Update: 28 September, 2023

This document describes the features and characteristics of HUF75321P3 and HUF75321S3S, two N-Channel UltraFET power MOSFET devices. These devices are manufactured using the advanced UltraFET process, which results in the lowest possible on-resistance per silicon area and outstanding performance. They can withstand high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. They are designed for applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, low-voltage bus switches, and power management in portable and battery-operated products.

Brand: intersil

File format: PDF

Size: 133 KB

MD5 Checksum: 2A76BE7D38EDB64C7A6AFB8B1201E95C

Publication date: 11 June, 2012

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PDF Link: intersil HUF75321P3 HUF75321S3S handbook PDF

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