MITSUBISHI ELECTRIC SEMICONDUCTORS POWER MODULES MOS USING IGBT MODULES Manual

This document describes the features of using Mitsubishi IGBT modules, including their ruggedness, low loss, and ease of use. Advanced processing technologies are utilized to achieve low on-state saturation voltages while maintaining high switching speed for 20kHz operation. The document also explains the structure and operation of IGBT modules and provides a comparison with MOSFET and BJT devices.

Brand: MITSUBISHI

File format: PDF

Size: 313 KB

MD5 Checksum: 78F185727407E71E18F6C226DC08324F

Publication date: 21 March, 2012

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